Bulletin I2120 rev. A 07/97
SAFE
IR
Series
10ETS..
INPUT RECTIFIER DIODE
Description/Features
The 10ETS.. rectifier
SAFE
IR
series has been
optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to
150°C junction temperature.
The
High Reverse Voltage
range available
allows design of input stage primary
rectification with
Outstanding Voltage Surge
capability.
Typical applications are in input rectification
and these products are designed to be used
with International Rectifier Switches and
Output Rectifiers which are available in
identical package outlines.
V
F
< 1.1V @ 10A
I
FSM
= 200A
V
RRM
800 to 1600V
Output Current in Typical Applications
Applications
Capacitive input filter T
A
= 55°C, T
J
= 125°C
common heatsink of 1°C/ W
Single-phase Bridge Three-phase Bridge Units
12.0
16.0
A
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
I
FSM
V
F
T
J
@ 10 A, T
J
= 25°C
Package Outline
Units
A
V
A
V
°C
10ETS..
10
800 to 1600
200
1.1
- 40 to 150
TO-220AC
Also available in D-pak (8EWS Series)
1
10ETS..
SAFE
IR
Series
Bulletin I2120 rev. A 07/97
Voltage Ratings
Part Number
V
RRM
, maximum
peak reverse voltage
V
10ETS08
10ETS12
10ETS16
800
1200
1600
V
RSM
, maximum non repetitive
peak reverse voltage
V
900
1300
1700
I
RRM
150°C
mA
0.5
Provide terminal coating for voltages above 1200V
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
I
2
t
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
2
t for fusing
10ETS..
10
170
Units
A
A
Conditions
@ T
C
= 105° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
200
130
145
A
2
s
A
2
√s
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
I
2
√t
Max. I
2
√t
for fusing
1450
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
r
t
Forward slope resistance
10ETS..
1.1
20
0.82
0.05
0.50
Units
V
mΩ
V
mA
Conditions
@ 10A, T
J
= 25°C
T
J
= 150°C
T
J
= 25 °C
T
J
= 150 °C
V
F(TO)
Threshold voltage
I
RM
Max. Reverse Leakage Current
V
R
= rated V
RRM
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
10ETS..
- 40 to 150
- 40 to 150
2.5
62
0.5
2(0.07)
Min.
Max.
6 (5)
12 (10)
Units
°C
°C
°C/W
°C/W
°C/W
g (oz.)
Kg-cm
(Ibf-in)
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typical Thermal Resistance, Case to
Heatsink
wt
T
Approximate Weight
Mounting Torque
Case Style
DC operation
Mounting surface , smooth and greased
TO-220AC
2
10ETS..
SAFE
IR
Series
Bulletin I2120 rev. A 07/97
Maximum Allowable Case Temperature (°C)
150
140
130
Conduction Angle
Maximum Allowable Case Temperat ure (°C)
150
140
130
Conduction Period
10ETS.. Series
R
thJC
(DC) = 2.5 °C/W
10ETS.. Series
R
thJC
(DC) = 2.5 °C/W
120
110
100
90
80
0
2
4
6
8
10
12
Average Forward Current (A)
30°
60°
90°
120
110
100
90
0
2
4
6
8
10
12
14
16
18
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
120°
180°
Fig. 1 - Current Rating Characteristics
Maximum Average Forward Power Loss (W)
16
14
12
10
RMS Limit
8
6
4
2
0
0
2
4
6
8
10
Average Forward Current (A)
Conduction Angle
Fig. 2 - Current Rating Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
Average Forward Current (A)
RMS Limit
Conduction Period
180°
120°
90°
60°
30°
Maximum Average Forward Power Loss (W)
DC
180°
120°
90°
60°
30°
10ETS.. Series
T
J
= 150°C
10ETS.. Series
T = 150°C
J
Fig. 3 - Forward Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
200
180
160
140
120
100
80
60
40
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Forward Power Loss Characteristics
240
220
200
180
160
140
120
100
80
60
40
0.01
10ETS.. Series
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 150°C
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 150 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
RRM
Reapplied
10ETS.. Series
0.1
Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
3
10ETS..
SAFE
IR
Series
Bulletin I2120 rev. A 07/97
100
Instantaneous Forward Current (A)
T
J
= 25°C
T
J
= 150°C
10
10ETS.. Series
1
0
0.5
1
1.5
2
2.5
3
Instantaneous Forward Voltage (V)
Fig. 8 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(°C/W)
10
D=
D=
D=
D=
D=
0.50
0.33
0.25
0.17
0.08
Steady State Value
(DC Operation)
1
Single Pulse
10ETS.. Series
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
4
10ETS..
SAFE
IR
Series
Bulletin I2120 rev. A 07/97
Ordering Information Table
Device Code
10
E
T
S
16
BASE
CATHODE
1
1
2
3
4
5
-
-
-
-
-
2
3
4
5
2
Current Rating
Circuit Configuration:
E = Single Diode
Package:
T = TO-220AC
Type of Silicon:
S = Standard Recovery Rectifier
Voltage code: Code x 100 = V
RRM
08 = 800V
12 = 1200V
16 = 1600V
1
CATHODE
3
ANODE
Outline Table
10.54 (0.41)
MAX.
3.78 (0.15)
3.54 (0.14)
2.92 (0.11)
2.54 (0.10)
TERM 2
1
3
DIA.
6.48 (0.25)
6.23 (0.24)
1.32 (0.05)
1.22 (0.05)
15.24 (0.60)
14.84 (0.58)
2°
14.09 (0.55)
13.47 (0.53)
3.96 (0.16)
3.55 (0.14)
2.04 (0.080) MAX.
0.10 (0.004)
1.40 (0.05)
1.15 (0.04)
0.94 (0.04)
0.69 (0.03)
2.89 (0.11)
2.84 (0.10)
1
4.57 (0.18)
4.32 (0.17)
3
0.61 (0.02) MAX.
5.08 (0.20) REF.
Dimensions in millimeters and inches
5
Microcontroller MCU
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