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10TQ

Description
10 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size151KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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10TQ Overview

10 A, SILICON, RECTIFIER DIODE

Bulletin PD-20057 01/01
10TQ...
10TQ...S
SCHOTTKY RECTIFIER
10 Amp
I
F(AV)
= 10Amp
V
R
= 35 to 45V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 10 Apk, T
J
= 125°C
range
35 to 45
1050
0.49
- 55 to 175
V
A
V
°C
Description/ Features
Units
A
The 10TQ.. Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175° C
junction temperature. Typical applications are in switching
power supplies, converters, free-wheeling diodes, and re-
verse battery protection.
175° C T
J
operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
10TQ
10
Case Styles
10TQ...
10TQ... S
TO-220
D
2
PAK
www.irf.com
1

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Description 10 A, SILICON, RECTIFIER DIODE 10 A, SILICON, RECTIFIER DIODE 10 A, SILICON, RECTIFIER DIODE Temperature Controllers

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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