IRC730-002PBF datasheet, PDF - EEWORLD Datasheet

IRC730-002PBF: DescriptionPower Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN; CategoryDiscrete semiconductor The transistor; File Size38KB，1 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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IRC730-002PBF Overview

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-220
package instruction	FLANGE MOUNT, R-PSFM-T5
Contacts	5
Reach Compliance Code	compliant
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	5.5 A
Maximum drain-source on-resistance	1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T5
JESD-609 code	e2
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN COPPER
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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