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121NQ

Description
120 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size99KB,5 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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121NQ Overview

120 A, SILICON, RECTIFIER DIODE

Bulletin PD-2.249 rev. C 05/02
121NQ...(R) SERIES
SCHOTTKY RECTIFIER
120 Amp
D-67
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 120Apk, T
J
=125°C
range
Description/Features
The 121NQ... (R) high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175° C junction temperature. Typical
applications are in switching power supplies, converters,
free-wheeling diodes, and reverse battery protection.
175° C T
J
operation
Unique high power, Half-Pak module
Replaces two parallel DO-5's
Easier to mount and lower profile than DO-5's
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
121NQ...(R) Units
120
35 to 50
19,800
0.56
- 55 to 175
A
V
A
V
°C
123NQ100
Lug Terminal Anode
Base Cathode
123NQ100R
Lug Terminal Cathode
Base Anode
Outline D-67 HALF PAK Module
Dimensions in millimeters and (inches)
www.irf.com
1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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