MMRF1016HR5 datasheet, PDF - EEWORLD Datasheet

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MMRF1016HR5: DescriptionRF MOSFET Transistors BL RF; Categorysemiconductor Discrete semiconductor; File Size1MB，19 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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RF MOSFET Transistors BL RF

MMRF1016HR5 Parametric

Parameter Name	Attribute value
Product Category	RF MOSFET Transistors
Manufacturer	NXP
RoHS	Details
Technology	Si
Packaging	Reel
Factory Pack Quantity	50
Unit Weight	0.464036 oz

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Freescale Semiconductor

Technical Data

Document Number: MMRF1016H

Rev. 0, 7/2014

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 600 W RF power LDMOS transistor is designed primarily for wideband

RF power amplifiers with frequencies up to 500 MHz. This device is unmatched

and is suitable for use in high power military applications.



Typical DVB--T OFDM Performance: V

= 50 Vdc, I

= 2600 mA,

out

= 125 W Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz,

Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.

Power Gain — 25 dB

Drain Efficiency — 28.5%

ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth



Typical Pulse Performance: V

= 50 Vdc, I

= 2600 mA,

out

= 600 W Peak, f = 225 MHz, Pulse Width = 100

sec,

Duty

Cycle = 20%

Power Gain — 25.3 dB

Drain Efficiency — 59%



Capable of Handling 10:1 VSWR @ 50 Vdc, 225 MHz, 600 W Peak Power,

Pulse Width = 100

sec,

Duty Cycle = 20%

Features



Characterized with Series Equivalent Large--Signal Impedance Parameters



CW Operation Capability with Adequate Cooling



Qualified Up to a Maximum of 50 V

Operation

Integrated ESD Protection

Designed for Push--Pull Operation

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation



In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

-500 MHz, 600 W, 50 V

BROADBAND

RF POWER MOSFET

MMRF1016HR5

NI-

-1230H-

-4S

PART IS PUSH-

-PULL

Gate A 3

1 Drain A

Gate B 4

2 Drain B

(Top View)

Note: The backside of the package is the

source terminal for the transistors.

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Value

--0.5, +120

--6.0, +10

-- 65 to +150

150

225

Unit

Vdc

C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 99C, 125 W CW, 225 MHz, 50 Vdc, I

= 2600 mA

Case Temperature 64C, 610 W CW, 352.2 MHz, 50 Vdc, I

= 150 mA

Case Temperature 81C, 610 W CW, 88--108 MHz, 50 Vdc, I

= 150 mA

Symbol

JC

0.20

0.14

0.16

Value

(2,3)

Unit

C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.



MMRF1016HR5

RF Device Data

Freescale Semiconductor, Inc.

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