BTA08, BTB08, T810, T835, T850
Snubberless™, logic level and standard 8 A Triacs
Datasheet - production data
Features
On-state rms current, I
T(RMS)
8 A
Repetitive peak off-state voltage, V
DRM
/
V
RRM
600 V to 800 V
Triggering gate current, I
GT (Q1)
5 to 50 mA
Description
Available either in through-hole and surface-
mount packages, these devices are suitable for
general purpose AC switching. They can be used
as an ON/OFF function in applications such as
static relays, heating regulation, induction motor
starting circuits or for phase control operation in
light dimmers and motor speed controllers, etc.
The Snubberless versions (BTA, BTB08_xxxxW
and T8 series) are specially recommended for
use on inductive loads, thanks to their high
commutation performance.
Logic level versions are designed to interface
directly with low power drivers such as
Microcontrollers.
By using an internal ceramic pad, the BTA series
provide voltage insulated tab (rated at 2500 V
RMS
)
in compliance with UL standards (file ref.:
E81734).
April 2017
DocID7472 Rev 12
1/18
www.st.com
This is information on a product in full production.
Characteristics
BTA08, BTB08, T810, T835, T850
1
Characteristics
Table 1: Absolute maximum ratings (T
j
= 25 °C unless otherwise stated)
Symbol
RMS on-state current
(full sine wave)
Non repetitive surge peak
on-state current
(full cycle, T
j
initial = 25 °C)
I
2
t value for fusing
Critical rate of rise of on-state
current I
G
= 2 x I
GT
, tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
f = 120 Hz
t
p
= 20 µs
Parameter
IPAK, DPAK,
TO-220AB,
D²PAK
TO-220ABIns.
f = 50 Hz
f = 60 Hz
I
TSM
I
2
t
dl/dt
I
GM
P
G(AV)
T
stg
T
j
T
c
= 110 °C
T
c
= 100 °C
t = 20 ms
t
p
= 16.7 ms
t
p
= 10 ms
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
80
84
36
50
4
1
-40 to +150
-40 to +125
A
A
2
s
A/µs
A
W
°C
°C
Value
Unit
I
T(RMS)
8
A
Table 2: Electrical characteristics (T
j
= 25 °C, unless otherwise specified) Snubberless and
logic level (3 quadrants)
T8
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt
Parameter
V
D
= 12 V,
R
L
= 30 Ω
V
D
= V
DRM
,
R
L
= 3.3 kΩ,
T
j
= 125 °C
I
T
= 100 mA
I
G
= 1.2 x I
GT
I - III
II
Quadrant
10
I - II - III
I - II - III
I - II - III
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Min.
Min.
15
25
30
40
5.4
2.8
4.5
7
35
50
60
400
50
70
80
1000
10
35
35
50
50
TW
5
1.2
0.2
10
10
15
20
3.5
1.5
15
25
30
40
5.4
2.98
4.5
7
A/ms
35
50
60
400
50
70
80
1000
SW
10
CW
35
BW
50
mA
V
V
mA
mA
V/µs
BTA08/BTB08
Unit
V
D
= 67% V
DRM
,
gate open, T
j
= 125 °C
(dV/dt)c = 0.1 V/µs,
T
j
= 125 °C
(dl/dt)c
(dV/dt)c = 10 V/µs,
T
j
= 125 °C
Without snubber,
T
j
= 125 °C
Notes:
(1)
Minimum
(2)
For
I
GT
is guaranteed at 5 % of I
GT
max.
both polarities of A2 referenced to A1
2/18
DocID7472 Rev 12
BTA08, BTB08, T810, T835, T850
Table 3: Standard (4 quadrants)
Characteristics
BTA08/BTB08
Symbol
Parameter
Quadrant
I - II - III
C
25
Max.
50
Max.
Min.
Max.
25
40
Max.
80
Min.
Min.
200
5
1.3
0.2
B
50
Unit
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
Notes:
(1)
(2)
V
D
= 12 V, R
L
= 33 Ω
mA
100
V
V
50
50
mA
100
400
10
V/µA
mA
IV
All
V
D
= V
DRM
, R
L
= 33 Ω, T
j
= 125 °C
I
T
= 500 mA
All
I - III - IV
I
G
= 1.2 I
GT
II
V
D
= 67 % V
DRM
gate open, T
j
= 125 °C
(dI/dt)c = 5.3 A/ms, T
j
= 125 °C
Minimum I
GT
is guaranteed at 5 % of I
GT
max.
For both polarities of A2 referenced to A1
Table 4: Static electrical characteristics
Symbol
V
TM
(1)
V
TO
(1)
R
D
(1)
I
DRM
I
RRM
Test conditions
I
TM
= 11 A, t
p
= 380 µs
threshold on-state voltage
Dynamic resistance
V
DRM
= V
RRM
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
Max.
Max.
Max.
Max.
Max.
Value
1.55
0.85
50
5
1
Unit
V
V
mΩ
µA
mA
Notes:
(1)
For
both polarities of A2 referenced to A1
Table 5: Thermal resistance
Symbol
R
th(j-c)
Max. junction to case thermal
resistance (AC)
Junction to
ambient
R
th(j-a)
Junction to ambient
S
(1)
= 1 cm²
S = 1 cm²
Parameter
IPAK / D2PAK / DPAK / TO-220AB
TO-220AB Insulated
D²PAK
DPAK
TO-220AB / TO-220AB Insulated
IPAK
Value
1.6
°C/W
2.5
45
70
°C/W
60
100
Unit
Notes:
(1)
S = Copper surface under tab
DocID7472 Rev 12
3/18
Characteristics
BTA08, BTB08, T810, T835, T850
1.1
Characteristics (curves)
Figure 1: Maximum power dissipation versus
on-state RMS current (full cycle)
Figure 2: RMS on-state current versus temperature
(full cycle)
Figure 3: RMS on-state current versus ambient
temperature (full cycle)
Figure 4: Relative variation of thermal impedance
versus pulse duration
Figure 5: On-state characteristics
(maximum values)
Figure 6: Surge peak on-state current versus
number of cycles
I
TSM
(A)
90
80
70
60
50
40
t = 16.66 ms
Non repetitive
T
j
initial = 25 °C
One cycle
30
20
10
Repetitive
T
C
= 110 °C
Number of cycles
0
1
10
100
1000
4/18
DocID7472 Rev 12
BTA08, BTB08, T810, T835, T850
Figure 7: Non repetitive surge peak on-state
current for a sinusoidal pulse (t
p
< 10 ms)
Characteristics
Figure 8: Relative variation of gate trigger current
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 10: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 11: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 12: DPAK and D2PAK thermal resistance
junction to ambient versus copper surface under
tab
DocID7472 Rev 12
5/18
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