A Business Partner of Renesas Electronics Corporation.
NE461M02 /
2SC5337
FEATURES
• Low noise
Preliminary
JEITA
Part No.
NPN Silicon RF Transistor for High-Frequency
Low Distortion Amplifier 4-Pin Power Minimold
• Low distortion: IM
2
= 59.0 dB TYP., IM
3
= 82.0 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA
NF = 1.5 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
Data Sheet
R09DS0047EJ0300
Rev.3.00
Sep 14, 2012
• 4-pin power minimold package with improved gain from the
NE46134 /
2SC4536
<R>
ORDERING INFORMATION
Part Number
NE461M02
2SC5337
NE461M02-T1
2SC5337-T1
Order Number
NE461M02-AZ
2SC5337-AZ
NE461M02-T1-AZ
2SC5337-T1-AZ
Package
4-pin power
minimold
(Pb-Free)
Note
Quantity
25 pcs (Non reel)
1 kpcs/reel
Note
Contains Lead in the part except the electrode terminals.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
V
CBO
O
V
CEO
V
EBO
I
C
P
tot
Note
SC
Junction Temperature
T
j
Storage Temperature
T
stg
Total Power Dissipation
2
Note
Mounted on 16 cm
×
0.7 mm (t) ceramic substrate (Copper plating)
DI
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
NT
Ratings
30
15
3.0
250
2.0
150
−65
to +150
Remark
To order evaluation samples, please contact your nearby sales office.
IN
Unit
V
V
V
mA
W
°C
°C
CAUTION
UE
Supplying Form
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
D
Page 1 of 5
A Business Partner of Renesas Electronics Corporation.
NE461M02 /
2SC5337
<R>
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
2nd Order Intermoduration Distortion
S
21e
NF
NF
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 20 V, I
E
= 0
V
BE
= 2 V, I
C
= 0
V
CE
= 10 V, I
C
= 50 mA
–
–
60
0 . 01
0 . 03
120
5.0
5.0
200
A
A
–
V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 50 mA, R
S
= R
L
= 75
V
in
= 105 dB V/75 , f
1
= 190 MHz,
f
2
= 90 MHz, f = f
1
−
f
2
V
CE
= 10 V, I
C
= 50 mA, R
S
= R
L
= 75
V
in
= 105 dB V/75 , f
1
= 190 MHz,
f
2
= 200 MHz, f = 2
×
f
1
−
f
2
,
7.0
–
–
Note 2
Note 2
UE
–
59.0
–
,
–
82.0
–
IM
2
3rd Order Intermoduration Distortion
IM
3
2.
R
S
= R
L
= 50
, tuned
<R>
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
QR/YQR
QR
60 to 120
QS/YQS
QS
DI
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
SC
O
Page 2 of 5
NT
100 to 200
IN
Notes 1.
Pulse measurement: PW
≤
350 s, Duty Cycle
≤
2%
D
8.3
–
dB
1.5
2.0
3.5
3.5
dB
dB
dB
dB
A Business Partner of Renesas Electronics Corporation.
NE461M02 /
2SC5337
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(W)
2.0
Mounted on Ceramic Substrate
(16 cm
2
×
0.7 mm (t) )
Reverse Transfer Capacitance C
re
(pF)
5.0
3.0
2.0
1.0
0.5
0.3
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
f = 1 MHz
1.0
0
50
100
150
UE
1
3
5
10
Collector to Base Voltage V
CB
(V)
300
Ambient Temperature T
A
(˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
IN
DC Current Gain h
FE
I
B
= 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
80
60
40
20
0
10
100
50
NT
20
10
0.1
Insertion Power Gain |S
21e
|
2
(dB)
1
O
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
10
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 10 V
f = 1 GHz
SC
5
3
2
1
10
5
DI
0.5
0.3
V
CE
= 10 V
f = 1 GHz
50 70 100
10
30
0
10
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
D
20
30
V
CE
= 10 V
10
100
1 000
30
50 70 100
Page 3 of 5
A Business Partner of Renesas Electronics Corporation.
NE461M02 /
2SC5337
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
V
CE
= 10 V
I
C
= 50 mA
Noise Figure NF (dB)
7
6
5
4
NOISE FIGURE vs.
COLLECTOR CURRENT
V
CE
= 10 V
f = 1 GHz
20
|S
21e
|
2
MAG
2
1
0.2
0.4
0.6 0.8 1.0 1.4
2.0
Frequency f (GHz)
3rd Order Intermodulation Distortion IM
3
(dB)
2nd Order Intermodulation Distortion (+) IM
2+
(dB)
2nd Order Intermodulation Distortion (–) IM
2–
(dB)
80
70
60
50
40
30
IM
3
, IM
2+
, IM
2–
vs.
COLLECTOR CURRENT
V
CE
= 10 V
IM
3
IM
2+
IM
2–
10
50
Collector Current I
C
(mA)
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
Click here to download S-parameters.
[Products]
→
[RF Devices]
→
[Device Parameters]
URL http://www.renesas.com/products/microwave/
DI
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
SC
parameters to microwave circuit simulators without the need for keyboard inputs.
O
Remark
The graphs indicate nominal characteristics.
NT
100
300
IM
3
: V
in
= 110 dB
μ
V/75
Ω
2 tone each
f = 2 × 190 – 200 MHz
IM
2+
: V
in
= 105 dB
μ
V/75
Ω
2 tone each
f = 90 + 100 MHz
IM
2–
: V
in
= 105 dB
μ
V/75
Ω
2 tone each
f = 190 – 90 MHz
IN
Page 4 of 5
UE
5
10
20
50
Collector Current I
C
(mA)
0
0
D
100
10
3
A Business Partner of Renesas Electronics Corporation.
NE461M02 /
2SC5337
PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
4.5±0.1
2.1
1.6
0.8
0.3
1.5±0.1
3.95±0.25
0.8 MIN.
E
B
E
0.46
±0.06
0.42±0.06
1.5
0.42±0.06
PIN CONNECTIONS
E : Emitter
C: Collector
B : Base
DI
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
SC
O
Page 5 of 5
NT
IN
3.0
UE
0.1
2.45±0.1
C
0.25±0.02
D
1.55
0.85
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