NTE629 datasheet, PDF - EEWORLD Datasheet

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NTE629: Description8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB; CategoryDiscrete semiconductor diode; File Size17KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com

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NTE629 Overview

8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

NTE629 Parametric

Parameter Name	Attribute value
Maker	NTE
Parts packaging code	TO-220AB
package instruction	R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
application	EFFICIENCY
Shell connection	CATHODE
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	250 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.15 µs
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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NTE629 & NTE630

Silicon Rectifier

Fast Recovery, Dual, Center Tap

Description:

The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed

for special applications such as DC power supplies, inverters, converters, ultrasonic systems, chop-

pers and low RF interference.

Features:

Low Forward Voltage

High Current Capability

Fast Switching for High Efficiency

High Surge Capacity

Glass Passivated Chip Junction

Absolute Maximum Ratings:

Peak Repetitive Reverse Voltage, V

RRM

NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Working Peak Reverse Voltage, V

RWM

NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

DC Blocking Voltage, V

NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

RMS Reverse Voltage, V

R(RMS)

NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V

NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420V

Average Rectifier Forward Current (Rated V

, T

= +150°C), I

F(AV)

Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A

Non–Repetitive Peak Surge Current, I

FSM

(8.3ms Single half Sine–Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . 250A

Operating Junction Temperature Range (Reverse Voltage Applied), T

. . . . . . . . . . –65° to +175°C

Storage Temperature Range (Reverse Voltage Applied), T

stg

. . . . . . . . . . . . . . . . . . . –65° to +175°C

NTE629 Related Products

	NTE629	NTE630
Description	8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB	8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
Maker	NTE	NTE
Parts packaging code	TO-220AB	TO-220AB
package instruction	R-PSFM-T3	R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
application	EFFICIENCY	EFFICIENCY
Shell connection	CATHODE	CATHODE
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Maximum non-repetitive peak forward current	250 A	250 A
Number of components	2	2
Phase	1	1
Number of terminals	3	3
Maximum operating temperature	175 °C	175 °C
Maximum output current	8 A	8 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	600 V
Maximum reverse recovery time	0.15 µs	0.25 µs
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE

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