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BDW63

CategoryDiscrete semiconductor    The transistor   
File Size67KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
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BDW63 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerBourns
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage45 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BDW63, BDW63A, BDW63B, BDW63C, BDW63D
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDW64, BDW64A, BDW64B, BDW64C and
BDW64D
60 W at 25°C Case Temperature
B
TO-220 PACKAGE
(TOP VIEW)
1
2
3
6 A Continuous Collector Current
Minimum h
FE
of 750 at 3V, 2 A
C
E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BDW63
BDW63A
Collector-base voltage (I
E
= 0)
BDW63B
BDW63C
BDW63D
BDW63
BDW63A
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW63B
BDW63C
BDW63D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
EB
I
C
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
A
2
SYMBOL
VALUE
45
60
UNIT
V
CBO
80
100
120
45
60
V
V
CEO
80
100
120
5
6
0.1
60
2
50
-65 to +150
-65 to +150
-65 to +150
V
V
A
A
W
W
mJ
°C
°C
°C
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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