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MBRT20035R

Categorysemiconductor    Discrete semiconductor   
File Size462KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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MBRT20035R Parametric

Parameter NameAttribute value
Product CategorySchottky Diodes & Rectifiers
ManufacturerGeneSiC
RoHSDetails
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / CaseModule
If - Forward Current200 A
Vrrm - Repetitive Reverse Voltage35 V
Vf - Forward Voltage0.75 V
Ifsm - Forward Surge Current1500 A
TechnologySi
Ir - Reverse Current1 uA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
PackagingBulk
Operating Temperature Range- 40 C to + 150 C
Factory Pack Quantity25
MBRT20020 thru MBRT20040R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Three Tower Package
V
RRM
= 20 V - 40 V
I
F(AV)
= 200 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRT20020(R) MBRT20030(R) MBRT20035(R) MBRT20040(R) Unit
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 100 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRT20020(R) MBRT20030(R) MBRT20035(R) MBRT20040(R) Unit
200
1500
0.70
1
10
30
0.45
200
1500
0.70
1
10
30
0.45
200
1500
0.70
1
10
30
0.45
200
1500
0.70
1
10
30
0.45
A
A
V
mA
Thermal characteristics
Thermal resistance, junction-
case (per leg)
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1

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Description Schottky Diodes u0026 Rectifiers 35V 200A Schottky Recovery Schottky Diodes u0026 Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 200A 20P/14R Schottky Diodes u0026 Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 200A 30P/21R Schottky Diodes u0026 Rectifiers 40V 200A Schottky Recovery Schottky Diodes u0026 Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 200A 30P/21R
Product Category Schottky Diodes & Rectifiers - Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers
Manufacturer GeneSiC - GeneSiC GeneSiC GeneSiC GeneSiC
RoHS Details - Details Details Details Details
Product Schottky Diodes - Schottky Diodes Schottky Diodes Schottky Diodes Schottky Diodes
Mounting Style SMD/SMT - SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package / Case Module - Module Module Module Module
If - Forward Current 200 A - 200 A 200 A 200 A 200 A
Vrrm - Repetitive Reverse Voltage 35 V - 20 V 30 V 40 V 30 V
Vf - Forward Voltage 0.75 V - 0.7 V 0.75 V 0.75 V 0.75 V
Ifsm - Forward Surge Current 1500 A - 1500 A 1500 A 1500 A 1500 A
Technology Si - Si Si Si Si
Ir - Reverse Current 1 uA - 1 uA 1 uA 1 uA 1 uA
Minimum Operating Temperature - 40 C - - 40 C - 40 C - 40 C - 40 C
Maximum Operating Temperature + 150 C - + 150 C + 150 C + 150 C + 150 C
Packaging Bulk - Bulk Bulk Bulk Bulk
Operating Temperature Range - 40 C to + 150 C - - 40 C to + 150 C - 40 C to + 150 C - 40 C to + 150 C - 40 C to + 150 C
Factory Pack Quantity 25 - 25 25 25 25
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