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NTMFS4935NBT3G

Categorysemiconductor    Discrete semiconductor   
File Size115KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTMFS4935NBT3G Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerON Semiconductor
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-FL-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current93 A
Rds On - Drain-Source Resistance3.2 mOhms
PackagingReel
Factory Pack Quantity5000
Transistor Type1 N-Channel
NTMFS4935N
Power MOSFET
Features
30 V, 93 A, Single N−Channel, SO−8 FL
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
V
(BR)DSS
30 V
R
DS(ON)
MAX
3.2 mW @ 10 V
4.2 mW @ 4.5 V
93 A
I
D
MAX
Applications
CPU Power Delivery, DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
10 s (Note 1)
Power Dissipation
R
qJA
10 s
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
Steady
State
P
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
21.8
13.8
2.63
40
25
8.7
W
W
A
Unit
V
V
A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
I
D
13
8.2
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
P
D
I
D
0.93
93
59
W
A
4935N
AYWZZ
D
D
D
P
D
I
DM
I
Dmax
T
J
,
T
STG
I
S
dV/d
t
E
AS
48
275
100
−55
to
+150
44
6
110
W
A
A
°C
A
V/ns
mJ
= Assembly Location
= Year
= Work Week
= Lot Traceability
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
ORDERING INFORMATION
Device
NTMFS4935NT1G
NTMFS4935NCT1G
NTMFS4935NT3G
NTMFS4935NCT3G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
5000 /
Tape & Reel
Single Pulse Drain−to−Source Avalanche
Energy T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L
= 47 A
pk
, L = 0.1 mH, R
G
= 25
W
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
May, 2012
Rev. 10
1
Publication Order Number:
NTMFS4935N/D

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