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SI4963DY-E3

CategoryDiscrete semiconductor    The transistor   
File Size71KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SI4963DY-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
Maximum drain current (Abs) (ID)6.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
Si4963DY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
−20
FEATURES
I
D
(A)
−6.2
−5
r
DS(on)
(W)
0.033 @ V
GS
=
−4.5
V
0.050 @ V
GS
=
−2.5
V
D
TrenchFETr Power MOSFET
D
Lead (Pb)-Free Version is RoHS
Compliant
Available
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information: Si4963DY-T1
Si4963DY-T1—E3 (Lead (Pb)-Free)
8
7
6
5
D
1
D
1
D
2
D
2
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
−20
"12
Unit
V
−6.2
−4.9
−40
−1.7
2.0
1.3
−55
to 150
−4.6
−3.7
A
−0.9
1.1
0.7
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71797
S-50695—Rev. D, 18-Apr-05
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
50
90
30
Maximum
62.5
110
35
Unit
_C/W
C/W
1

SI4963DY-E3 Related Products

SI4963DY-E3 SI4963DY-T1-E3
Description MOSFET 20V 6.2A 2W
Is it Rohs certified? conform to conform to
Reach Compliance Code compliant compliant
Maximum drain current (Abs) (ID) 6.2 A 6.2 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 2 W 2 W
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
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