NTMFS4841N
Power MOSFET
Features
30 V, 57 A, Single N−Channel, SO−8FL
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
V
(BR)DSS
30 V
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R
DS(ON)
MAX
7.0 mW @ 10 V
11.4 mW @ 4.5 V
I
D
MAX
57 A
Applications
•
Refer to Application Note AND8195/D
•
CPU Power Delivery
•
DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1) Steady
State
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
−
t = 10 sec
Power Dissipation
R
qJA,
t
v
10 sec
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
C
= 85°C
T
A
= 25°C
I
DM
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
I
D
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
13.1
9.5
2.17
1.13
19.9
14.4
5
2.6
8.3
6
0.87
0.45
57
41
41.7
21.7
171
−55
to
+150
35
6
180
A
W
A
W
A
W
A
W
Unit
V
V
A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
4841N
AYWZZ
D
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
°C
A
V/ns
mJ
NTMFS4841NT3G
Device
NTMFS4841NT1G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
I
L
= 19 A
pk
, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
May, 2012
−
Rev. 8
1
Publication Order Number:
NTMFS4841N/D
NTMFS4841N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient
−
t = 10 sec
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
3
57.7
143.4
25
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V to
11.5 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0
W
13.5
66.5
15.5
7.5
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1436
348
177
11.5
2.0
5.0
5.1
25.4
nC
17
nC
pF
g
FS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 15 V, I
D
= 15 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
5.6
4.7
4.6
9.2
8.5
16
2.5
V
mV/°C
7.0
mW
11.4
S
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4841N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.9
0.8
20.5
11.6
8.9
10.7
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
8.1
24.2
22.8
5.7
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.93
0.005
1.84
3.2
nH
W
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4841N
TYPICAL PERFORMANCE CURVES
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 5 V
4.5 V
4V
3.8 V
3.6 V
3.4 V
0
1
2
3
4
5
I
D
, DRAIN CURRENT (AMPS)
5.5 V to 10 V
T
J
= 25°C
V
DS
= 10 V
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
1
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.017
Figure 2. Transfer Characteristics
0.018
0.017
0.016
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
I
D
= 30 A
T
J
= 25°C
T
J
= 25°C
0.014
V
GS
= 4.5 V
0.011
0.008
V
GS
= 11.5 V
0.005
0.002
3
4
5
6
7
8
9
10
11
10
15
20
25
30
35
40
45
50
55
60
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−55 −35 −15
10000
I
D
= 30 A
V
GS
= 10 V
1000
I
DSS
, LEAKAGE (nA)
100
10
1
0.1
5
25
45
65
85
105 125 145
5
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMFS4841N
TYPICAL PERFORMANCE CURVES
2200
2000
C, CAPACITANCE (pF)
1800
1600
1400
1200
1000
800
600
400
200
0
10
C
rss
5
0
5
V
GS
V
DS
10
15
20
25
30
C
rss
C
oss
C
iss
T
J
= 25°C
12
11
10
9
8
7
6
5
4
3
2
1
0
0
2
4
Q
GS
Q
GD
V
DD
= 15 V
V
GS
= 11.5 V
I
D
= 30 A
T
J
= 25°C
6 8 10 12 14 16 18 20 22 24 26
Q
G
, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Q
T
C
iss
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
IS, SOURCE CURRENT (AMPS)
V
GS
= 0 V
25
20
15
10
5
0
0.5
T
J
= 25°C
V
DD
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
t, TIME (ns)
100
t
r
t
d(off)
10
t
d(on)
t
f
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (AMPS)
180
160
140
120
100
80
60
40
20
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 19 A
100
10
ms
100
ms
1 ms
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
10 ms
dc
100
1
10
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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