BDP948_BDP950_BDP954
PNP Silicon AF Power Transistors
•
For AF driver and output stages
•
High collector current
•
High current gain
•
Low collector-emitter saturation voltage
•
Complementary types: BDP947, BDP949
BDP953 (NPN)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
4
2
1
3
Type
Marking
Pin Configuration
Package
BDP948
BDP950
BDP954
BDP948 1=B
BDP950 1=B
BCP954 1=B
2=C
2=C
2=C
3=E
3=E
3=E
4=C
4=C
4=C
-
-
-
-
-
-
SOT223
SOT223
SOT223
1
2011-10-05
BDP948_BDP950_BDP954
Maximum Ratings
Parameter
Collector-emitter voltage
BDP948
BDP950
BDP954
Collector-base voltage
BDP948
BDP950
BDP954
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
100 °C
Junction temperature
Storage temperature
T
j
T
stg
150
-65 ... 150
°C
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
CBO
45
60
120
5
3
5
200
500
5
W
mA
A
Symbol
V
CEO
45
60
100
Value
Unit
V
Thermal Resistance
Parameter
Symbol
R
thJS
Value
≤
10
Unit
Junction - soldering point
1)
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-10-05
BDP948_BDP950_BDP954
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Symbol
min.
Values
typ.
max.
Unit
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0 , BDP948
I
C
= 10 mA,
I
B
= 0 , BDP950
I
C
= 10 mA,
I
B
= 0 , BDP954
V
(BR)CEO
V
45
60
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
-
-
-
-
-
0.1
20
100
nA
-
25
85
50
15
-
-
-
-
-
-
-
475
-
-
0.5
1.3
V
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BDP948
I
C
= 100 µA,
I
E
= 0 , BDP950
I
C
= 100 µA,
I
E
= 0 , BDP954
V
(BR)CBO
45
60
120
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
h
FE
-
DC current gain
1)
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 1 V
I
C
= 1 A,
V
CE
= 2 V BDP948,BDP950
BDP954
I
C
= 1 A,
V
CE
= 2 V
Collector-emitter saturation voltage
1)
I
C
= 2 A,
I
B
= 0.2 A
V
CEsat
V
BEsat
-
-
Base emitter saturation voltage
1)
I
C
= 2 A,
I
B
= 0.2 A
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 100 MHz
1
Pulse
f
T
C
cb
-
-
100
40
-
-
MHz
pF
test: t < 300µs; D < 2%
3
2011-10-05
BDP948_BDP950_BDP954
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 2 V
10
3
Collector-emitter saturation voltage
I
C
=
ƒ
(V
CEsat
),
h
FE
= 10
10
4
mA
-
10
3
h
FE
I
C
10
2
10
2
100°C
25°C
-50°C
100 °C
25 °C
-50 °C
10
1
10
1 0
10
10
1
10
2
10
3
mA
10
4
10
0
0
0.1
0.2
0.3
0.4
V
0.6
I
C
V
CEsat
Base-emitter saturation voltage
Collector current
I
C
=
ƒ
(V
BE
)
I
C
= (V
BEsat
),
h
FE
= 10
10
4
mA
V
CE
= 2 V
10
4
mA
10
3
10
3
10
2
-50°C
25°C
100°C
-50°C
25°C
100°C
10
2
I
C
10
1
I
C
10
1
10
0
0
10
0
0
0.2
0.4
0.6
0.8
1
V
1.3
0.2
0.4
0.6
0.8
1
V
1.3
V
BEsat
V
BE
4
2011-10-05
BDP948_BDP950_BDP954
Collector cutoff current
I
CBO
=
ƒ
(T
A
)
V
CB
= 45 V
10
5
nA
10
4
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(V
EB
)
425
pF
350
C
CB
(C
EB
)
I
CB0
10
3
max
300
250
200
150
CEB
10
2
10
1
typ
100
10
0
50
CCB
10
-1
0
20
40
60
80
100
120
°C
150
0
0
4
8
12
16
V
22
T
A
V
CB
(V
EB
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
5.5
W
10
2
4.5
4
R
thJS
P
tot
10
1
3.5
3
2.5
2
1.5
1
0.5
0
0
15
30
45
60
75
90 105 120
°C
150
10
0
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
s
tp
5
2011-10-05
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