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BUK9222-55A-C1118

Description
MOSFET TransMOSFET N-CH 55V 48A 3-Pin(2+Tab)DPAK
Categorysemiconductor    Discrete semiconductor   
File Size347KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MOSFET TransMOSFET N-CH 55V 48A 3-Pin(2+Tab)DPAK

BUK9222-55A-C1118 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage55 V
Id - Continuous Drain Current48 A
PackagingReel
Factory Pack Quantity2500
Transistor Type1 N-Channel
Unit Weight0.012346 oz
DP
AK
BUK9222-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 1 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
48
103
V
A
W
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