MCP6566/6R/7/9
1.8V Low Power Open-Drain Output Comparator
Features
• Propagation Delay at 1.8V
DD
:
- 56 ns (typical) High to Low
• Low Quiescent Current: 100 µA (typical)
• Input Offset Voltage: ±3 mV (typical)
• Rail-to-Rail Input: V
SS
- 0.3V to V
DD
+ 0.3V
• Open-Drain Output
• Wide Supply Voltage Range: 1.8V to 5.5V
• Available in Single, Dual, and Quad
• Packages: SC70, SOT-23-5, SOIC, MSOP,
TSSOP
Description
The Microchip Technology, Inc. MCP6566/6R/7/9 fam-
ilies of Open-Drain output comparators are offered in
single, dual and quad configurations.
These comparators are optimized for low power 1.8V,
single-supply applications with greater than rail-to-rail
input operation. The internal input hysteresis eliminates
output switching due to internal input noise voltage,
reducing current draw. The open-drain output of the
MCP6566/6R/7/9 family requires a pull up resistor and
it supports pull-up voltages above and below V
DD
which can be used to level shift. The output toggle
frequency can reach a typical of 4 MHz (typical) while
limiting supply current surges and dynamic power con-
sumption during switching.
This family operates with single supply voltage of 1.8V
to 5.5V while drawing less than 100 µA/comparator of
quiescent current (typical).
Typical Applications
•
•
•
•
•
•
•
Laptop computers
Mobile Phones
Hand-held Electronics
RC Timers
Alarm and Monitoring Circuits
Window Comparators
Multi-vibrators
Package Types
MCP6566
SOT-23-5, SC70-5
OUT
1
V
SS
2
+IN
3
MCP6567
SOIC, MSOP
- +
+ -
Design Aids
• Microchip Advanced Part Selector (MAPS)
• Analog Demostration and Evaluation Boards
• Application Notes
5
V
DD
OUTA
1
-INA
2
4
-IN
8
V
DD
7
OUTB
6
-INB
5
+INB
Related Device
• Push-Pull Output: MCP6561/1R/2/4
MCP6566R
SOT-23-5
OUT
1
V
DD
2
+IN
3
5
V
SS
+
-
+
-
+INA
3
V
SS
4
MCP6569
SOIC, TSSOP
OUTA
1
-INA
2
+INA
3
V
DD
4
+INB
5
-INB
6
- +
+ -
- +
+ -
14
OUTD
13
-IND
12
+IND
11
V
SS
10 +INC
9
-INC
8
OUTC
Typical Application
+3V
PU
V
IN
V
DD
R
2
R
F
+5V
DD
V
OUT
MCP656X
4
-IN
OUTB
7
R
3
©
2009 Microchip Technology Inc.
DS22143A-page 1
MCP6566/6R/7/9
NOTES:
DS22143A-page 2
©
2009 Microchip Technology Inc.
MCP6566/6R/7/9
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Maximum Ratings*
V
DD
- V
SS
....................................................................... 6.5V
Open-Drain Output.............................................V
SS
+ 10.5V
All other inputs and outputs...........V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input voltage ......................................|V
DD
- V
SS
|
Output Short Circuit Current .................................... ±25 mA
Current at Input Pins .................................................. ±2 mA
Current at Output and Supply Pins .......................... ±50 mA
Storage temperature ................................... -65°C to +150°C
Ambient temp. with power applied .............. -40°C to +125°C
Junction temp............................................................ +150°C
ESD protection on all pins (HBM/MM)..................≥ 4 kV/300V
*Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated: V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= +25°C, V
IN
+ = V
DD
/2, V
IN
- = V
SS
,
and R
Pull-Up
= 20 kΩ to V
PU
= V
DD
(see
Figure 1-1).
Parameters
Power Supply
Supply Voltage
Quiescent Current per comparator
Power Supply Rejection Ratio
Input
Input Offset Voltage
Input Offset Drift
Input Offset Current
Input Bias Current
V
OS
ΔV
OS
/ΔT
I
OS
I
B
-10
—
—
—
—
—
Input Hysteresis Voltage
Input Hysteresis Linear Temp. Co.
Input Hysteresis Quadratic Temp. Co.
Common-Mode Input Voltage Range
Common-Mode Rejection Ratio
V
HYST
TC
1
TC
2
V
CMR
CMRR
1.0
—
—
V
SS
−0.2
V
SS
−0.3
54
50
54
Common Mode Input Impedance
Differential Input Impedance
Push-Pull Output
Pull-up Voltage
High Level Output Voltage
High Level Output Current leakage
Low Level Output Voltage
Short Circuit Current
(Notes 3)
Output Pin Capacitance
Note 1:
2:
3:
4:
V
PULL_UP
V
OH
I
OH_leak
V
OL
I
SC
C
OUT
1.6
—
—
—
—
—
—
—
—
—
±30
8
5.5
V
PULL_UP
1
0.6
—
—
V
V
µA
V
mA
pF
(see
Figure 1-1)
(Notes 3, 4)
Note 4
I
OUT
= 3 mA/8 mA @ V
DD
= 1.8V/5.5V
Not to exceed Absolute Max. Rating
Z
CM
Z
DIFF
—
—
V
DD
I
Q
PSRR
1.8
60
63
—
100
70
5.5
130
—
+10
—
—
—
—
5000
5.0
—
—
V
DD
+0.2
V
DD
+0.3
—
—
—
—
—
V
µA
dB
mV
µV/°C
pA
pA
pA
pA
mV
µV/°C
µV/°C
2
V
V
dB
dB
dB
Ω||pF
Ω||pF
V
DD
= 1.8V
V
DD
= 5.5V
V
CM
= -0.3V to V
DD
+0.3V, V
DD
= 5.5V
V
CM
= V
DD
/2 to V
DD
+0.3V, V
DD
= 5.5V
V
CM
= -0.3V to V
DD
/2, V
DD
= 5.5V
I
OUT
= 0
V
CM
= V
SS
V
CM
= V
SS
(Note 1)
V
CM
= V
SS
V
CM
= V
SS
T
A
= +25°C, V
IN
- = V
DD
/2
T
A
= +85°C, V
IN
- = V
DD
/2
T
A
= +125°C, V
IN
- = V
DD
/2
V
CM
= V
SS
(Notes 1, 2)
Symbol
Min
Typ
Max
Units
Conditions
±
3
±
2
±
1
1
60
1500
—
10
0.3
—
—
66
63
65
10
13
||4
10 ||2
13
The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
V
HYST
at different temperatures is estimated using V
HYST
(T
A
) = V
HYST @ +25°C
+ (T
A
- 25°C) TC
1
+ (T
A
- 25°C)
2
TC
2
.
Limit the output current to Absolute Maximum Rating of 50 mA.
The pull up voltage for the open drain output V
PULL_UP
can be as high as the absolute maximum rating of 10.5V. In this
case, I
OH_leak
can be higher than 1 µA (see
Figure 2-30).
DS22143A-page 3
©
2009 Microchip Technology Inc.
MCP6566/6R/7/9
AC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated,: Unless otherwise indicated,: V
DD
= +1.8V to +5.5V, V
SS
= GND,
T
A
= +25°C, V
IN+
= V
DD
/2, V
IN-
= V
SS
, R
Pull-Up
= 20 kΩ to V
PU
= V
DD
, and C
L
= 25 pf (see
Figure 1-1).
Parameters
Propagation Delay
High-to-Low,100 mV Overdrive
Output
Fall Time
Maximum Toggle Frequency
Input Voltage Noise
Note 1:
2:
t
F
f
TG
E
NI
—
—
—
—
20
4
2
350
—
—
—
—
ns
MHz
MHz
µV
P
-
P
V
DD
= 5.5V
V
DD
= 1.8V
10 Hz to 10 MHz
(Note 1)
t
PHL
—
—
56
34
80
80
ns
ns
V
CM
= V
DD
/2, V
DD
= 1.8V
V
CM
= V
DD
/2, V
DD
= 5.5V
Symbol
Min
Typ
Max
Units
Conditions
ENI is based on SPICE simulation.
Rise time t
R
and t
PLH
depend on the load (R
L
and C
L
). These specification are valid for the specified load only.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated: V
DD
= +1.8V to +5.5V and V
SS
= GND.
Parameters
Symbol
T
A
T
A
T
A
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
Min
-40
-40
-65
—
—
—
—
—
—
Typ
—
—
—
331
256
163
206
120
100
Max
+125
+125
+150
—
—
—
—
—
—
Units
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, SC70-5
Thermal Resistance, SOT-23-5
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
1.2
Test Circuit Configuration
This test circuit configuration is used to determine the
AC and DC specifications.
V
DD
MCP656X
V
PU
= V
DD
200 kΩ
200 kΩ
V
IN
= V
SS
I
OUT
R
PU
20 kΩ
V
OUT
25 pF
V
SS
= 0V
FIGURE 1-1:
AC and DC Test Circuit for
the Open-Drain Output Comparators.
DS22143A-page 4
©
2009 Microchip Technology Inc.
MCP6566/6R/7/9
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= +25°C, V
IN
+ = V
DD
/2, V
IN–
= GND,
R
L
= 20 kΩ to V
PU
= V
DD
, and C
L
= 25 pF.
30%
Occurrences (%)
V
DD
= 1.8V
V
CM
= V
SS
Avg. = -0.1 mV
StDev = 2.1 mV
3588 units
V
DD
= 5.5V
V
CM
= V
SS
Avg. = -0.9 mV
StDev = 2.1 mV
3588 units
50%
Occurrences (%)
40%
30%
20%
10%
0%
25%
20%
15%
10%
5%
0%
V
DD
= 1.8V
Avg. = 3.4 mV
StDev = 0.2 mV
3588 units
V
DD
= 5.5V
Avg. = 3.6 mV
StDev = 0.1 mV
3588 units
-10 -8
-6
-4
-2 0
2
V
OS
(mV)
4
6
8
10
1.0
1.5
2.0
2.5 3.0 3.5
V
HYST
(mV)
4.0
4.5
5.0
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-4:
Input Hysteresis Voltage.
60%
Occurrences (%)
50%
40%
30%
20%
10%
0%
Occurrences (%)
V
CM
= V
SS
Avg. = 0.9 µV/°C
StDev = 6.6 µV/°C
1380 Units
T
A
= -40°C to +125°C
60%
50%
40%
30%
20%
10%
0%
0
1380 Units
T
A
= -40°C to 125°C
V
CM
= V
SS
V
DD
= 5.5V
Avg. = 10.4 µV/°C
StDev = 0.6 µV/°C
V
DD
= 1.8V
Avg. = 12 µV/°C
StDev = 0.6 µV/°C
-60 -48 -36 -24 -12 0 12 24
V
OS
Drift (µV/°C)
36
48
60
2
4
8 10 12 14 16
V
HYST
Drift, TC1 (µV/°C)
6
18
20
FIGURE 2-2:
Input Offset Voltage Drift.
FIGURE 2-5:
Input Hysteresis Voltage
Drift - Linear Temp. Co. (TC1).
7.0
6.0
5.0
V
OUT
(V)
4.0
3.0
2.0
1.0
0.0
-1.0
V
DD
= 5.5V
V
IN
+ = V
DD
/2
30%
Occurrences (%)
V
DD
= 5.5V
V
DD
= 1.8V
Avg. = 0.3 µV/°C
StDev = 0.2 µV/°C
2
2
V
IN
-
V
OUT
20%
Avg. = 0.25 µV/°C
2
2
StDev = 0.1 µV/°C
10%
1380 Units
T
A
= -40°C to +125°C
V
CM
= V
SS
0%
-0.50
Time (3 µs/div)
-0.25
0.00
0.25
0.50
0.75
V
HYST
Drift, TC2 (µV/°C
2
)
1.00
FIGURE 2-3:
Phase Reversal.
Input vs. Output Signal, No
FIGURE 2-6:
Input Hysteresis Voltage
Drift - Quadratic Temp. Co. (TC2).
©
2009 Microchip Technology Inc.
DS22143A-page 5
京公网安备 11010802033920号
EEWORLD
