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NTE558

Description
1 A, 1500 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size16KB,1 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
Environmental Compliance
Download Datasheet Parametric View All

NTE558 Overview

1 A, 1500 V, SILICON, SIGNAL DIODE, DO-41

NTE558 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNTE
package instructionO-XALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-41
JESD-30 codeO-XALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1500 V
Maximum reverse recovery time0.25 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
NTE558
General Purpose Silicon Rectifier
Description:
The NTE558 is a general purpose silicon rectifier in a DO41 type case designed for low high voltage
fast recovery applications.
Maximum Ratings:
Peak Repetitive Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
DC Blocking Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
RMS Reverse Voltage, V
R(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1050V
Average Rectified Forward Current. I
O
(Single Phase, Resistive Load, 60Hz, T
A
= +75°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Forward Surge Current, I
FSM
(8.3ms Single Half Sine–Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . . 50A
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified. Single Phase, Half Wave,
60Hz, Resistve or Inductive Load)
Parameter
Maximum Instantaneous Forward
Voltage Drop
Maximum DC Reverse Current
Maximum Full–Cycle Average
ReverseCurrent
Maximum Reverse Recovery Time
Typical Junction capacitance
Symbol
V
F
I
R
I
R(AV)
t
rr
C
Test Conditions
I
O
= 1A, T
J
= +25°C
V
R
= 1500V, T
A
= +25°C
Full Cycle, T
L
+55°C,
.375” (9.5mm) lead length
I
F
= 500mA, I
R
= 1A, I
RR
= 250mA
Note 1
Min Typ Max Unit
20
1.3
5
100
250
V
µA
µA
ns
pF
Note 1. Measured at 1MHz and applied reverse voltage of 4V.
1.100
(27.94)
Min
.210 (5.33)
Max
.034 (0.87) Dia Max
.107 (2.72) Dia Max
Color Band Denotes Cathode

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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