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Datasheet> All Categories > Discrete semiconductor> The transistor> Jantxv2N6693
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Jantxv2N6693

Description
Bipolar Transistors - BJT Power BJT
CategoryDiscrete semiconductor    The transistor   
File Size59KB，2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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Bipolar Transistors - BJT Power BJT

Jantxv2N6693 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-63
package instructionPOST/STUD MOUNT, O-MUPM-X3
Contacts3
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-61
JESD-30 codeO-MUPM-X3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)175 W
Certification statusQualified
GuidelineMIL
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Base Number Matches1

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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/538
Devices
2N6676
2N6678
2N6691
2N6693
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
V
CEO
V
CBO
V
CEX
V
EBO
I
B
I
C
2N6676 2N6678
2N6691 2N6693
300
400
450
650
450
650
8.0
5.0
15
2N6676 2N6691
2N6678 2N6693
6.0
(2)
3.0
(3)
175
175
-65 to +200
Max.
1.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
2N6676, 2N6678
TO-3 (TO-204AA)*
@ T
A
= 25
0
C
@ T
C
= 25
0
C
(1)
Operating & Storage Junction Temperature Range
Total Power Dissipation
P
T
T
op;
T
stg
Symbol
R
θ
JC
W
W
0
C
Unit
C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 1.0 W/
0
C for T
C
> 25
0
C
2) Derate linearly 34.2 mW/
0
C for T
A
> 25
0
C
3)
Derate linearly 17.1 mW/
0
C for T
A
> 25
0
C
0
2N6691, 2N6693
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 450 Vdc, V
BE
= 1.5 Vdc
V
CE
= 650 Vdc, V
BE
= 1.5 Vdc
2N6676, 2N6691
2N6678, 2N6693
2N6676, 2N6691
2N6678, 2N6693
V
(BR)
CEO
300
400
0.1
0.1
Vdc
I
CEX
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

Jantxv2N6693 Related Products

Jantxv2N6693 Jantxv2N6676 Jantxv2N6678 Jan2N6693 FP52SP-2083-CT50Q Jantx2N6678 GUS-TS0A-02-1840-DD
Description Bipolar Transistors - BJT Power BJT Power Bipolar Transistor, 15A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN Power Bipolar Transistor, 15A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN Bipolar Transistors - BJT Power BJT Fixed Resistor, Metal Film, 0.4W, 208000ohm, 200V, 0.25% +/-Tol, 50ppm/Cel, Power Bipolar Transistor, 15A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN Array/Network Resistor, Isolated, Tantalum Nitride/nickel Chrome, 0.1W, 184ohm, 100V, 0.5% +/-Tol, -50,50ppm/Cel, 2617,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code compliant unknown unknown compliant compliant unknown compliant
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Number of terminals 3 2 2 3 2 2 20
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 160 °C 200 °C 125 °C
Package form POST/STUD MOUNT FLANGE MOUNT FLANGE MOUNT POST/STUD MOUNT Axial FLANGE MOUNT SMT
Terminal surface Tin/Lead (Sn/Pb) TIN LEAD TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb)
Is it lead-free? Contains lead Contains lead Contains lead Contains lead - Contains lead -
Parts packaging code TO-63 TO-3 TO-3 TO-63 - TO-3 -
package instruction POST/STUD MOUNT, O-MUPM-X3 TO-204AA, 2 PIN TO-204AA, 2 PIN POST/STUD MOUNT, O-MUPM-X3 - TO-204AA, 2 PIN -
Contacts 3 2 2 3 - 2 -
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR - COLLECTOR -
Maximum collector current (IC) 15 A 15 A 15 A 15 A - 15 A -
Collector-emitter maximum voltage 400 V 300 V 400 V 400 V - 400 V -
Configuration SINGLE SINGLE SINGLE SINGLE - SINGLE -
Minimum DC current gain (hFE) 8 8 8 8 - 8 -
JEDEC-95 code TO-61 TO-204AA TO-204AA TO-61 - TO-204AA -
JESD-30 code O-MUPM-X3 O-MBFM-P2 O-MBFM-P2 O-MUPM-X3 - O-MBFM-P2 -
Number of components 1 1 1 1 - 1 -
Package body material METAL METAL METAL METAL - METAL -
Package shape ROUND ROUND ROUND ROUND CYLINDRICAL PACKAGE ROUND -
Polarity/channel type NPN NPN NPN NPN - NPN -
Maximum power dissipation(Abs) 175 W 175 W 175 W 175 W - 175 W -
Certification status Qualified Not Qualified Qualified Qualified - Not Qualified -
Guideline MIL MIL MIL MIL - MIL -
surface mount NO NO NO NO - NO -
Terminal form UNSPECIFIED PIN/PEG PIN/PEG UNSPECIFIED - PIN/PEG -
Terminal location UPPER BOTTOM BOTTOM UPPER - BOTTOM -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON - SILICON -
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz 15 MHz - 15 MHz -
Objectid - 1689297330 1689297336 - 240993002 1689294090 801248180
ECCN code - EAR99 EAR99 - EAR99 EAR99 EAR99

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