EEWORLDEEWORLDEEWORLD

Part Number

Search

JANTXV2N5681

Description
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size54KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

JANTXV2N5681 Online Shopping

Suppliers Part Number Price MOQ In stock  
JANTXV2N5681 - - View Buy Now

JANTXV2N5681 Overview

Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN

JANTXV2N5681 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1960925271
package instructionTO-39, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusQualified
GuidelineMIL-19500/583
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
TECHNICAL DATA
NPN POWER TRANSISTOR SILICON AMPLIFIER
Qualified per MIL-PRF-19500/583
Devices
2N5681
2N5682
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS (T
A =
25
°
C unless otherwise noted)
2N5681
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Temperature Range
V
CEO
V
CBO
V
EBO
I
C
I
B
P
T
T
op
,
T
stg
Symbol
0
2N5682
120
120
4.0
1.0
0.5
1.0
10
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
°C
Unit
0
C
100
100
4.0
1.0
0.5
1.0
10
-65 to +200
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.7 mW/ C for T
A
> +25 C
2) Derate linearly 57 mW/
0
C for T
C
> +25
0
C
0
R
θ
JC
Max.
17.5
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
100
120
1.0
10
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
2N5681
2N5682
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 70 Vdc
2N5681
V
CE
= 80 Vdc
2N5682
Collector-Emitter Cutoff Current
V
BE
= 1.5 Vdc
V
CE
= 100 Vdc
2N5681
V
CE
= 120 Vdc
2N5682
Collector-Baser Cutoff Current
V
CE
= 100 Vdc
2N5681
V
CE
= 120 Vdc
2N5682
V(
BR
)
CEO
Vdc
µAdc
µAdc
I
EBO
I
CEO
I
CEX
100
nAdc
I
CBO
100
nAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JANTXV2N5681 Related Products

JANTXV2N5681 Jantx2N5681 2N5681 JANTX2n5682 2N5682 JAN2N5681
Description Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
Objectid 1960925271 1136304182 1410172227 1960925268 1689289390 1960925263
Reach Compliance Code unknown unknown compliant unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 2 A 1 A 1 A 1 A
Collector-emitter maximum voltage 100 V 100 V 100 V 120 V 120 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 5 5 40 5 5 5
JEDEC-95 code TO-205AD TO-205AD TO-5 TO-205AD TO-5 TO-205AD
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Qualified Not Qualified Not Qualified Qualified Not Qualified Qualified
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead Contains lead - Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible - - incompatible incompatible incompatible
package instruction TO-39, 3 PIN CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 TO-39, 3 PIN - TO-39, 3 PIN
JESD-609 code e0 e0 - e0 e0 e0
Maximum operating temperature 200 °C - 200 °C 200 °C 200 °C 200 °C
Maximum power dissipation(Abs) 1 W - 1 W 1 W 10 W 1 W
Terminal surface TIN LEAD TIN LEAD - TIN LEAD TIN LEAD TIN LEAD
transistor applications AMPLIFIER AMPLIFIER - AMPLIFIER SWITCHING AMPLIFIER
Nominal transition frequency (fT) 30 MHz - 80 MHz 30 MHz 30 MHz 30 MHz

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 495  2099  188  259  1924  10  43  4  6  39 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号