VS-4ESH01-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 4 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
K
K
Anode 1
Anode 2
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
2
SMPC (TO-277A)
Cathode
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Package
Circuit configuration
4A
100 V
0.73 V
27 ns
175 °C
SMPC (TO-277A)
Single
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers and freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
Sp
= 165 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
100
4
130
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 4 A
I
F
= 4 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 100 V
MIN.
100
-
-
-
-
-
TYP.
-
0.86
0.73
-
1
24
MAX.
-
0.93
0.79
2
10
-
μA
pF
V
UNITS
Reverse leakage current
Junction capacitance
Revision: 06-Jul-17
Document Number: 94998
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-4ESH01-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
27
-
20
31
2.2
4.4
22
70
MAX.
-
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to solder pad
Thermal resistance,
junction to ambient
Approximate weight
Marking device
Case style SMPC (TO-277A)
SYMBOL
T
J
, T
Stg
R
thJ-Sp
R
thJA
TEST CONDITIONS
MIN.
-55
-
-
TYP.
-
2.2
85
0.1
0.0035
JEH1
MAX.
175
3
°C/W
-
g
oz.
UNITS
°C
I
F
- Instantaneous Forward Current (A)
100
1000
I
R
- Reverse Current (μA)
100
175 °C
10
1
125 °C
0.1
0.01
0.001
25 °C
150 °C
10
T
J
= 175 °C
1
T
J
= 150°C
T
J
= 125°C
T
J
= 25 °C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 06-Jul-17
Document Number: 94998
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-4ESH01-M3
www.vishay.com
100
5
RMS limit
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
Average Power Loss (W)
4
3
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
2
1
10
0
25
50
75
100
0
0
1
2
3
4
5
6
7
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
180
45
40
Allowable Case Temperature (°C)
175
35
170
DC
30
125 °C
t
rr
(ns)
25
25 °C
20
15
10
I
F
= 4 A
100
1000
165
Square
wave (D = 0.50)
80 % rated V
R
applied
160
See
note
(1)
155
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
120
I
F
= 4 A
100
80
125 °C
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
Q
rr
(nC)
60
40
20
0
100
1000
25 °C
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 06-Jul-17
Document Number: 94998
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-4ESH01-M3
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Thermal Impedance (°C/W)
Typical, junction to case
1
0.1
Single
pulse
Steady state value (DC)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 8 - Transient Thermal Impedance, Junction to Case
100
Z
thJA
- Thermal Impedance (°C/W)
Typical, junction to ambient
10
1
0.1
Single
pulse
Steady state value (DC)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 9 - Transient Thermal Impedance, Junction to Ambient
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 06-Jul-17
Document Number: 94998
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-4ESH01-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
4
2
E
3
S
4
H
5
01
6
-M3
7
Vishay Semiconductors product
Current rating (4 = 4 A)
Circuit configuration:
E = single diode
-
-
-
-
S = SMPC package
Process type,
H = hyperfast recovery
Voltage code (01 = 100 V)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-4ESH01-M3/86A
VS-4ESH01-M3/87A
QUANTITY PER REEL
1500
6500
MINIMUM ORDER QUANTITY
1500
6500
PACKAGING DESCRIPTION
7" diameter plastic tape and reel
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95570
www.vishay.com/doc?95565
www.vishay.com/doc?88869
www.vishay.com/doc?96073
Revision: 06-Jul-17
Document Number: 94998
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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