NTE5411 thru NTE5416
Silicon Controlled Rectifier (SCR)
4 Amp, Sensitive Gate
Description:
The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for
high volume consumer applications such as temperature, light, and speed control: process and re-
mote control, and warning systems where reliability of operation is important.
Features:
D
Passivated Surface for Reliability and Uniformity
D
Power Rated at Economical Prices
D
Practical Level Triggering and Holding Characteristics
Absolute Maximum Ratings:
(T
C
= +110°C unles otherwise specified)
Repetitive Peak Forward and Reverse Blocking Voltage, V
DRM
, V
RRM
(1/2 Sine Wave, R
GK
= 1000Ω, T
C
= –40° to +110°C, Note 1)
NTE5411 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
NTE5412 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
NTE5413 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Non–Repetitive Peak Reverse Blocking Voltage , V
RSM
(1/2 Sine Wave, R
GK
= 1000Ω, T
C
= –40° to +110°C)
NTE5411 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5412 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5413 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
NTE5414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
NTE5415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
NTE5416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650V
Average On–State Current, I
T(AV)
T
C
= –40° to +110°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6A
T
C
= +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6A
Surge On–State Current (T
C
= +90°C), I
TSM
1/2 Sine wave, 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
1/2 Sine wave, 1.5ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Circuit Fusing (t = 8.3ms), I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6A
2
s
Peak Gate Power (Pulse Width = 10µs, T
C
= +90°C), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias ap-
plied to the gate concurrently with a negative potential on the anode. Devices should not
be tested with a constant current source for forward or reverse blocking capability such that
the voltage applied exceeds the rated blocking voltage.
Absolute Maximum Ratings (Cont’d):
(T
C
= +110°C unles otherwise specified)
Average Gate Power (t = 8.2ms, T
C
= +90°C), P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1W
Peak Forward Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A
Peak Reverse Gate Voltage, V
RGM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3°C/W
Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Mounting Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 in. lb.
Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of
6 in. lb. does not appreciably lower case–to–sink thermal resistance. Anode lead and heat-
sink contact pad are common.
Electrical Characteristics:
(T
C
= +25°C, R
GK
= 1000Ω unles otherwise specified)
Parameter
Peak Forward or Reverse
Blocking Current
Peak Forward “ON” Voltage
Gate Trigger Current
(Continuous DC, Note 4)
Gate Trigger Voltage
(Continuous DC)
Gate Non–Trigger Voltage
Holding Current
Symbol
I
DRM
,
I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
Test Conditions
Rated V
DRM
or V
RRM
, T
C
= +25°C
Rated V
DRM
or V
RRM
, T
C
= +110°C
I
TM
= 8.2A Peak, Note 3
V
AK
= 12V, R
L
= 24Ω
V
AK
= 12V, R
L
= 24Ω, T
C
= –40°C
Source Voltage = 12V, R
S
= 50Ω,
V
AK
= 12V, R
L
= 24Ω, T
C
= –40°C
V
AK
= Rated V
DRM
, R
L
= 100Ω,
T
C
= +110°C
V
AK
= 12V, I
GT
= 2mA, T
C
= +25°C
Initiating On–State Current = 200mA,
T
C
= –40°C
Total Turn–On Time
t
gt
Source Voltage = 12V, R
S
= 6kΩ,
I
TM
= 8.2A, I
GT
= 2mA, Rated V
DRM
,
Rise Time = 20ns, Pulse Width = 10µs
V
D
= Rated V
DRM
, T
C
= +110°C
Min
–
–
–
–
–
–
0.2
–
–
–
Typ
–
–
–
–
–
–
–
–
–
2
Max
10
200
2.2
200
500
1
–
5
10
–
Unit
µA
µA
V
µA
µA
V
V
mA
mA
µs
Forward Voltage Application Rate
dv/dt
–
10
–
V/µs
Note 3. Pulse Width = 1ms to 2ms, Duty Cycle = 2%.
Note 4. Measurement does not include R
GK
current.
Embedded System
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