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HN2D01FUTE85LF

Description
Digital Isolators Quad Ch 1.0kV Isltr 1M 3/1 NB SOIC16
Categorysemiconductor    Discrete semiconductor   
File Size270KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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Digital Isolators Quad Ch 1.0kV Isltr 1M 3/1 NB SOIC16

HN2D01FUTE85LF Parametric

Parameter NameAttribute value
Product CategoryDiodes - General Purpose, Power, Switching
ManufacturerToshiba Semiconductor
RoHSDetails
ProductSwitching Diodes
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Peak Reverse Voltage85 V
Max Surge Current1 A
If - Forward Current80 mA
ConfigurationTriple
Recovery Time1.6 ns
Vf - Forward Voltage0.98 V
Ir - Reverse Current0.5 uA
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
PackagingReel
Maximum Diode Capacitance3 pF
Pd - Power Dissipation200 mW
Factory Pack Quantity3000
Vr - Reverse Voltage80 V
Unit Weight0.000265 oz
HN2D01FU
TOSHIBA Diode
Silicon Epitaxial Planar Type
HN2D01FU
Ultra High Speed Switching Application
Unit: mm
HN2D01FU is composed of 3 independent diodes.
Low forward voltage
: V
F (3)
= 0.98V (typ.)
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
Small total capacitance
: C
T
= 0.5pF (typ.)
Pin Assignment
(Top View)
Marking
JEDEC
JEITA
1-2T1C
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
240
*
80
*
1
*
200
125
−55
to 125
Unit
V
V
mA
mA
A
mW
°C
°C
TOSHIBA
Weight: 6.2mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the
absolute maximum ratings per diodes is 75
%
of the single diode one.
Start of commercial production
1990-10
1
2014-03-01

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