NTE5374 & NTE5375
Silicon Controlled Rectifier (SCR)
for High Speed Switching
Maximum Ratings and Electrical Characteristics:
(T
J
= +125°C unless otherwise specified)
Repetitive Peak Voltages, V
DRM
, V
RRM
NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Non–Repetitive Peak Off–State Voltage, V
DSM
NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Non–Repetitive Peak Reverse Blocking Voltage, V
RSM
NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V
Average On–State Current (T
C
= +85°C, Single phase, 50Hz, 180° sinewave), I
T(AV)
. . . . . . . 183A
RMS On–State Current, I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 355A
Continuous On–State Current, I
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 355A
Peak One–Cycle Surge (Non–Repetitive) On–State Current, I
TSM
(t = 10ms, half sinewave, T
J
(initial) = +125°C, V
RM
= 0.6V
RRM
max) . . . . . . . . . . . . . . . 3500A
(t = 10ms, half sinewave, T
J
(initial) = +125°C, V
RM
≤
10V) . . . . . . . . . . . . . . . . . . . . . . . 3850A
Maximum Permissible Surge Energy (T
J
(initial) = +125°C), I
2
t
(t = 10ms, V
RM
= 0.6V
RRM
max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61.3 x 10
3
A
2
sec
(t = 10ms, V
RM
≤
10V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74.1 x 10
3
A
2
sec
(t = 3ms, V
RM
≤
10V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54.5 x 10
3
A
2
sec
Peak Forward Gate Current (Anode Positive with Respect to Cathode), I
FGM
. . . . . . . . . . . . . . 18A
Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), V
FGM
. . . . . . . . . . . . . . 12V
Peak Reverse Gate Voltage, V
RGM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Peak Gate Power, P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Rate of Rise of Off–State Voltage (To 80% V
DRM
, Gate Open–Circuit), dv/dt . . . . . . . . . . . 200V/µs
Rate of Rise of On–State Current (Repetitive, Gate Drive 20V, 20Ω with t
r
≤
1µs), di/dt . . 500A/µs
Peak On–State Voltage (I
TM
= 600A), V
TM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.96V
Forward Conduction Threshold Voltage, V
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4V
Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.937mΩ
Repetitive Peak Off–State Current (At Rated V
DRM
), I
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Repetitive Peak Reverse Current (At Rated V
RRM
), I
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Maximum Gate Current Required to Fire All Devices (T
J
= +25°C, V
A
= 6V, I
A
= 1A), I
GT
. . 200mA
Maximum Gate Voltage Required to Fire All Devices (T
J
= +25°C, V
A
= 6V, I
A
= 1A), V
GT
. . . . . 3V
Maximum Ratings and Electrical Characteristics (Cont’d):
(T
J
= +125°C unless otherwise specified)
Maximum Holding Current (T
J
= +25°C, V
A
= 6V, I
A
= 1A), I
H
. . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Maximum Gate Voltage Which Will Not Trigger Any Device, V
GD
. . . . . . . . . . . . . . . . . . . . . . . 0.25V
Typical Stored Charge (I
TM
= 300A, dir/dt 20A/µs, V
RM
= 50V, 50% Chord Value), Q
rr
. . . . . . 50µC
Maximum Circuit Commutated Turn–Off Time, t
q
(I
TM
= 300A, dir/dt = 20A/µs, dv/dt = 200V/µs to 80% V
DRM
) . . . . . . . . . . . . . . . . . . 30 – 40µs
Typical Circuit Commutated Turn–Off Time, t
q
(I
TM
= 300A, dir/dt = 20A/µs, dv/dt = 20V/µs to 80% V
DRM
) . . . . . . . . . . . . . . . . . . . 25 – 35µs
Operating Temperature Range, T
HS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04/W
1.443 (36.68) Max
(Across Corners)
For No. 6 Screw
Cathode
Cathode
(Red)
1.212 (30.8) Dia Max
.156 (3.96) Max
1.077 (27.35) Max
ÇÇÇ
ÇÇÇ
1.031 (26.18) Dia
(Ceramic)
.643 (16.35)
For No. 6 Screw
.350 (8.89)
Dia Max
Gate
(White)
8.100
(205.74)
Max
(Terminals
1, 2, & 3)
3.625
(92.07)
Max
.630 (16.0)
3/4–16 UNF–2A
(Terminal 4)
Anode
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