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BCP56-16115

Description
Diodes - General Purpose, Power, Switching SW DBL 75V 150MA HS
Categorysemiconductor    Discrete semiconductor   
File Size1MB,23 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BCP56-16115 Overview

Diodes - General Purpose, Power, Switching SW DBL 75V 150MA HS

BCP56-16115 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerNXP
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO100 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current1 A
Gain Bandwidth Product fT180 MHz
Maximum Operating Temperature+ 150 C
Height1.7 mm
Length6.7 mm
Minimum Operating Temperature- 65 C
PackagingReel
Pd - Power Dissipation960 mW
Factory Pack Quantity1000
Width3.7 mm
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
Rev. 9 — 25 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP56
BCX56
BC56PA
[1]
Type number
[1]
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP53
BCX53
BC53PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
[1]
Pulse test: t
p
300
s; 
= 0.02.
Conditions
open base
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
80
1
2
250
160
250
Unit
V
A
A

BCP56-16115 Related Products

BCP56-16115 BCX56-10115 BCX56-16147 BCP56-10115 BCX56-16115 BCP56TX
Description Diodes - General Purpose, Power, Switching SW DBL 75V 150MA HS Headers u0026 Wire Housings CLOSED W/O TABS 2P white tin 24 AWG RF Transceiver HIGH LINK BUDGET TRANSCEIVER Bipolar Transistors - BJT TRANS MED PWR TAPE-7 Voltage References 3.0V 50ppm/DegC 50uA SOT23-3 Series MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer NXP NXP NXP NXP NXP NXP
RoHS Details Details Details Details Details Details
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT -
Package / Case SOT-223-4 SOT-89-3 SOT-89-3 SOT-223-4 SOT-89-3 -
Transistor Polarity NPN NPN NPN NPN NPN -
Configuration Single Single Single Single Single -
Collector- Emitter Voltage VCEO Max 80 V 80 V 80 V 80 V 80 V -
Collector- Base Voltage VCBO 100 V 100 V 100 V 100 V 100 V -
Emitter- Base Voltage VEBO 5 V 5 V 5 V 5 V 5 V -
Maximum DC Collector Current 1 A 1 A 2 A 1 A 1 A -
Gain Bandwidth Product fT 180 MHz 180 MHz 180 MHz 180 MHz 180 MHz -
Maximum Operating Temperature + 150 C + 150 C + 150 C + 150 C + 150 C -
Height 1.7 mm 1.6 mm - 1.7 mm 1.6 mm -
Length 6.7 mm 4.6 mm - 6.7 mm 4.6 mm -
Minimum Operating Temperature - 65 C - 65 C - 55 C - 65 C - 65 C -
Packaging Reel MouseReel Reel MouseReel MouseReel Reel
Pd - Power Dissipation 960 mW 1250 mW 1.35 W 960 mW 1250 mW -
Factory Pack Quantity 1000 1000 - - 1000 1000
Width 3.7 mm 2.6 mm - 3.7 mm 2.6 mm -
Unit Weight - 0.004603 oz 0.004603 oz 0.003951 oz 0.004603 oz -
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