PRELIMINARY DATA SHEET
SILICON TRANSISTOR
UPA810T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
•
SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
(Top View)
2.1
±
0.1
1.25
±
0.1
HIGH GAIN:
|S
21E
|
2
= 9.0 dB TYP at 1 GHz
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
HIGH COLLECTOR CURRENT:
100 mA
2.0
±
0.2
1.3
0.65
1
6
5
0.2 (All Leads)
2
3
The UPA810T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device suited for
various hand-held wireless applications.
DESCRIPTION
4
0.9
±
0.1
0.7
0.15
- 0.05
0 ~ 0.1
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
h
FE1
Cre
2
NF
h
FE1
/h
FE2
f
T
I
EBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
GHz
pF
dB
dB
0.85
7
UNITS
μ
A
μ
A
70
3.0
120
4.5
0.7
9
1.2
2.5
1.5
MIN
UPA810T
S06
TYP
MAX
1.0
1.0
250
|S
21E
|
2
Notes: 1. Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA810T-T1, 3K per reel.
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005
UPA810T
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
mW
°C
°C
RATINGS
20
12
3
100
110
200
150
-65 to +150
Note: 1.Operation in excess of any one of these parameters
may result in permanent damage.
ORDERING INFORMATION (Solder Contains Lead)
PART NUMBER
UPA810T
UPA810T-T1
QUANTITY
Loose Products (50 pcs)
Taping products
(3 KPCS/Reel)
PACKAGING
Embossed tape 8mm wide. Pin 6 (Q1 Base),
Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter)
face to perforation side of tape
ORDERING INFORMATION (Pb-Free)
PART NUMBER
UPA810T-A
UPA810T-T1-A
QUANTITY
Loose Products (50 pcs)
Taping products
(3 KPCS/Reel)
PACKAGING
Embossed tape 8mm wide. Pin 6 (Q1 Base),
Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter)
face to perforation side of tape
Embedded System
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EEWORLD
