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BSC080N03LS-G

Description
Switching Voltage Regulators 4A High Eff Buck Con Integrated Inductor
Categorysemiconductor    Discrete semiconductor   
File Size461KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSC080N03LS-G Overview

Switching Voltage Regulators 4A High Eff Buck Con Integrated Inductor

BSC080N03LS-G Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current53 A
Rds On - Drain-Source Resistance6.7 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge21 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Channel ModeEnhancement
Configuration1 N-Channel
Fall Time2.6 ns
Forward Transconductance - Min30 S
Height1.27 mm
Length5.9 mm
Pd - Power Dissipation35 W
Rise Time2.8 ns
Factory Pack Quantity5000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time3.3 ns
Width5.15 mm
Unit Weight0.012804 oz
BSC080N03LS G
OptiMOS™3
Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel; Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC080N03LS G
Package
PG-TDSON-8
Marking
080N03LS
Product Summary
V
DS
R
DS(on),max
I
D
30
8
53
PG-TDSON-8
V
mW
A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
I
D,pulse
I
AS
E
AS
T
C
=25 °C
T
C
=25 °C
I
D
=35 A,
R
GS
=25
W
I
D
=50 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
53
33
43
27
Unit
A
14
212
45
15
mJ
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
1)
V
GS
±20
V
J-STD20 and JESD22
Rev. 2.1
page 1
2013-05-17
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