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BYV26DGPHE3-73

Description
Rectifiers 800 Volt 1.0A 75ns Glass Passivated
Categorysemiconductor    Discrete semiconductor   
File Size122KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BYV26DGPHE3-73 Overview

Rectifiers 800 Volt 1.0A 75ns Glass Passivated

BYV26DGPHE3-73 Parametric

Parameter NameAttribute value
Product CategoryRectifiers
ManufacturerVishay
RoHSDetails
Mounting StyleThrough Hole
Package / CaseDO-15
Vr - Reverse Voltage800 V
If - Forward Current1 A
TypeFast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage2.5 V
Max Surge Current30 A
Ir - Reverse Current5 uA
Recovery Time75 ns
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 175 C
PackagingAmmo Pack
Height3.6 mm
Length7.6 mm
ProductRectifiers
Factory Pack Quantity2000
Termination StyleAxial
Width3.6 mm
Unit Weight0.012346 oz
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits
ORDERING INFORMATION
(Example)
DEVICE NAME
BYV26E
BYV26E
ORDERING CODE
BYV26E-TR
BYV26E-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
TYPE DIFFERENTIATION
V
R
= 200 V; I
F(AV)
= 1 A
V
R
= 400 V; I
F(AV)
= 1 A
V
R
= 600 V; I
F(AV)
= 1 A
V
R
= 800 V; I
F(AV)
= 1 A
V
R
= 1000 V; I
F(AV)
= 1 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYV26A
BYV26B
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYV26C
BYV26D
BYV26E
Peak forward surge current
Average forward current
Non repetitive reverse avalanche energy
Junction and storage temperature range
I
(BR)R
= 1 A, inductive load
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
F(AV)
E
R
T
j
= T
stg
VALUE
200
400
600
800
1000
30
1
10
- 55 to + 175
UNIT
V
V
V
V
V
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
l = 10 mm, T
L
= constant
SYMBOL
R
thJA
VALUE
45
UNIT
K/W
Rev. 1.8, 04-Sep-12
Document Number: 86040
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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