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BSC019N02KS-G

Categorysemiconductor    Discrete semiconductor   
File Size663KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSC019N02KS-G Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance1.95 mOhms
Vgs - Gate-Source Voltage12 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Channel ModeEnhancement
ConfigurationSingle Quad Drain Triple Source
Fall Time8 ns
Height1.27 mm
Length5.9 mm
Pd - Power Dissipation2.8 W
Rise Time187 ns
Factory Pack Quantity5000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time95 ns
Typical Turn-On Delay Time15 ns
Width5.15 mm
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