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18TQ

Description
18 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size204KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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18TQ Overview

18 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB

Bulletin PD-20178 rev. C 07/03
18TQ...
18TQ...S
SCHOTTKY RECTIFIER
18 Amp
I
F(AV)
= 18Amp
V
R
= 35 to 45V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 18 Apk, T
J
= 125°C
range
Description/Features
Units
A
V
A
V
°C
The 18TQ Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175°C
junction temperature. Typical applications are in switching
power supplies, converters, free-wheeling diodes, and re-
verse battery protection.
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
175° C T
J
operation
18TQ
18
35 to 45
1800
0.53
- 55 to 175
Case Styles
18TQ...
18TQ...
S
Base
Cathode
2
Base
Cathode
2
1
3
1
3
Cathode
Anode
N/C
Anode
TO-220AC
www.irf.com
D
2
PAK
1

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