NTE490 datasheet, PDF - EEWORLD Datasheet

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NTE490: Description500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size19KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com; Environmental Compliance

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NTE490 Overview

500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

NTE490 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NTE
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.5 A
Maximum drain current (ID)	0.5 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.83 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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NTE490

MOSFET

N–Ch, Enhancement Mode

High Speed Switch

Absolute Maximum Ratings:

Drain–Source Voltage, V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Gate–Source Voltage, V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V

Drain Current (Note 1), I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA

Total Device Dissipation (T

= +25°C), P

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW

Operating Junction Temperature Range, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1. The Power Dissipation of the package may result in a lower continuous drain current.

Electrical Characteristics:

= +25°C unless otherwise specified)

Parameter

OFF Characteristics

Drain–Source Breakdown Voltage

Gate Reverse Current

ON Characteristics

(Note 2)

Gate Threshold Voltage

Static Drain–Source ON Resistance

Drain Cutoff Current

Forward Transconductance

Small–Signal Characteristics

Input Capacitance

Switching Characteristics

Turn–On Time

Turn–Off Time

off

= 200mA

–

iss

= 10V, V

= 0, f = 1MHz

–

GS(Th)

(on)

D(off)

= V

, I

= 1mA

= 10V, I

= 200mA

= 25V, V

= 0

= 10V, I

= 250mA

0.8

–

2.0

1.8

–

200

3.0

5.0

0.5

–

(BR)DSS

= 0, I

= 100µA

GSS

= 15V, V

= 0

–

0.01

–

Symbol

Test Conditions

Min

Typ

Max

Unit

Ω

µA

mmhos

Note 2. Pulse Test: Pulse Width

≤

300µs, Duty Cycle

≤

2%.

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