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JANTXV2N3440

Description
Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size273KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTXV2N3440 Overview

Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN

JANTXV2N3440 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid2078586605
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2020-02-17 11:20:05
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)5 W
Certification statusQualified
GuidelineMIL-19500
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Maximum off time (toff)10000 ns
Maximum opening time (tons)1000 ns
2N3439 thru 2N3440
NPN LOW POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/368
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi
also offers numerous other transistor products to meet higher and lower power ratings with
various switching speed requirements in both through-hole and surface-mount packages.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N3439 through 2N3440 series.
JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368.
RoHS compliant versions available (commercial grade only).
V
CE(sat)
= 0.5 V @ I
C
= 50 mA.
Turn-On time t
on
= 1.0 µs max @ I
C
= 20 mA, I
B1
= 2.0 mA.
Turn-Off time t
off
= 10 µs max @ I
C
= 20 mA, I
B1
= -I
B2
= 2.0 mA.
TO-39
(TO-205AD)
Package
Also available in:
TO-5 package
(long leaded)
2N3439L – 2N3440L
APPLICATIONS / BENEFITS
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
U4 package
(surface mount)
2N3439U4 – 2N3440U4
UA package
(surface mount)
2N3439UA - 2N3440UA
MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
(2)
@ T
C
= +25°C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
stg
2N3439
350
450
7.0
1.0
0.8
5.0
2N3440
250
300
Unit
V
V
V
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Operating & Storage Junction Temperature Range
-65 to +200
Notes:
1. Derate linearly @ 4.57mW/°C for T
A
> +25°C.
2. Derate linearly @ 28.5mW/°C for T
C
> +25°C
LDS-0022, Rev. 4 (111683)
©2011 Microsemi Corporation
Page 1 of 6

JANTXV2N3440 Related Products

JANTXV2N3440 JAN2N3440
Description Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Objectid 2078586605 2112594647
package instruction CYLINDRICAL, O-MBCY-W3 TO-39, 3 PIN
Reach Compliance Code not_compliant unknown
ECCN code EAR99 EAR99
Samacsys Manufacturer Microsemi Corporation Microsemi Corporation
Samacsys Modified On 2020-02-17 11:20:05 2023-03-07 16:10:32
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 250 V 250 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 40
JEDEC-95 code TO-205AD TO-205AD
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 5 W 5 W
Certification status Qualified Qualified
Guideline MIL-19500 MIL-19500
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz
Maximum off time (toff) 10000 ns 10000 ns
Maximum opening time (tons) 1000 ns 1000 ns
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