NTE318
Silicon NPN Transistor
RF Power Output
Description:
The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-
tions. This device utilizes improved metallization systems to achieve extreme ruggedness under se-
vere operating conditions.
Features:
D
Designed for HF military and commercial equipment 40W minimum with greater than 10.0dB gain
D
Withstands severe mismatch under operating conditions
D
Low inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Device Dissipation (+25°C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W
Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
18
36
4
–
10
200
–
47
10
Typ
–
–
–
–
–
–
–
–
–
Max
–
–
–
1
–
–
200
–
–
MHz
pF
W
dB
Unit
V
V
V
mA
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 200mA, I
B
= 0, Note 1
Collector–Emitter Breakdown Voltage V
(BR)CES
I
C
= 200mA, V
BE
= 0, Note 1
Emitter–Base Breakdown Voltage
Collector Cut–Off Current
DC Current Gain
Gain Bandwidth
Output Capacitance
Amplifier Power Out
Amplifier Power Gain
V
(BR)EBO
I
E
= 2.5mA, I
C
= 0
I
CBO
h
FE
f
t
C
ob
P
O
P
g
V
CB
= 15V, I
E
= 0
V
CE
= 5V, I
C
= 250mA
V
CE
= 13.5V, I
C
= 100mA
V
CB
= 12.5V, I
C
= 0,
–F
O
= 1.0MHz
28MHz/12.5V
Note 1. Pulsed through 25mH Inductor
PCB Design
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