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TSM60N750CH

Description
MOSFET Power MOSFET, N-CHAN 600V, 6A, 750mOhm
Categorysemiconductor    Discrete semiconductor   
File Size775KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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MOSFET Power MOSFET, N-CHAN 600V, 6A, 750mOhm

TSM60N750CH Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerTaiwan Semiconductor
RoHSDetails
TechnologySi
Package / CaseTO-251-3
PackagingTube
Factory Pack Quantity75
TSM60N750
600V, 6A, 0.75Ω
N-Channel Power MOSFET
TO-252
(DPAK)
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
600
0.75
10.8
Unit
V
Ω
nC
Features
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
Block Diagram
Application
Power Supply.
Lighting
Ordering Information
Part No.
TSM60N750CH C5G
Package
TO-251
Packing
75pcs / Tube
N-Channel MOSFET
TSM60N750CP ROG
TO-252
2.5kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings
(T
A
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Symbol
V
DS
V
GS
T
C
= 25
o
C
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
, T
STG
(Note 2)
Limit
IPAK/DPAK
600
±30
6
18
62.5
90
1.9
- 55 to +150
Unit
V
V
A
A
W
mJ
A
o
Total Power Dissipation @ T
C
=25
o
C
Single Pulsed Avalanche Energy
(Note 3)
Single Pulsed Avalanche Current
(Note 3)
Operating Junction and Storage Temperature Range
C
1/7
Version: A14
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