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2SA733 — PNP General Purpose Amplifier
September 2009
2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
1
TO-92
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings*
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
, T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
T
A
=25°C unless otherwise noted
Parameter
Value
-60
-50
-5.0
Units
V
V
V
mA
°C
- Continuous
-500
-55 to +150
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
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EfficentMax™
EZSWITCH™*
™*
®
Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series™
®
FACT
®
FAST
FastvCore
FETBench
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*
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FRFET
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SM
Global Power Resource
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Gmax™
GTO
IntelliMAX
ISOPLANAR
MegaBuck™
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MicroFET
MicroPak
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®
®
OPTOPLANAR
®
PowerTrench
®
PowerXS™
Programmable Active Droop
QFET
®
QS
Quiet Series
RapidConfigure
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START
SPM
®
STEALTH™
SuperFET
SuperSOT -3
SuperSOT -6
SuperSOT -8
SupreMOS™
SyncFET™
Sync-Lock™
®
*
The Power Franchise
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TinyBuck
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TinyPower
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TriFault Detect
TRUECURRENT *
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®
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Definition of Terms
Datasheet Identification
Advance Information
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No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
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