MV104
Silicon Tuning Diode
Dual Voltage Variable Capacitance Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top- of- the- line application requiring
- -
-
back- -back diode configurations for minimum signal distortion and
-to-
detuning.
Features
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Pin 1
A1
Pin 2
C
Pin 3
A2
•
High Figure of Merit --
•
•
•
•
Q = 140 (Typ) @ V
R
= 3.0 Vdc, f = 100 MHz
Guaranteed Capacitance Range - 37- pF @ V
R
= 3.0 Vdc
- -42
Dual Diodes - Save Space and Reduce Cost
-
Monolithic Chip Provides Near Perfect Matching -
-
Guaranteed
±
1.0% (Max) Over Specified Tuning Range
This is a Pb-
-Free Device*
12
TO-
-92
CASE 29
STYLE 15
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
32
200
280
2.8
+125
--55 to
+150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
MV
104
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MV104G
Package
TO--92
(Pb--Free)
Shipping
†
5000 Units / Bulk
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
C
T
, Diode Capacitance
V
R
= 3.0 Vdc, f = 1.0 MHz
pF
Device
MV104
©
Semiconductor Components Industries, LLC, 2007
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 100 MHz
C
R
, Capacitance Ratio
C
3
/C
30
f = 1.0 MHz
Min
2.5
Max
2.8
Min
37
Max
42
1
Min
100
Typ
140
April, 2007 - Rev. 5
-
Publication Order Number:
MV104/D
MV104
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Diode Capacitance Temperature Coefficient
(I
R
= 10
mAdc)
T
A
= 25°C
(V
R
= 30 Vdc) T
A
= 60°C
(V
R
= 4.0 Vdc, f = 1.0 MHz)
Symbol
V
(BR)R
I
R
TC
C
Min
32
--
--
--
Typ
--
--
--
280
Max
--
50
500
--
Unit
Vdc
nAdc
ppm/°C
TYPICAL CHARACTERISTICS
(EACH DIODE)
100
C T , DIODE CAPACITANCE (pF)
70
Q, FIGURE OF MERIT
550
450
350
250
150
10
0.3
50
T
A
= 25°C
f = 100 MHz
40
20
0.5
Figure 1. Diode Capacitance (Each Diode)
C T , DIODE CAPACITANCE (NORMALIZED)
2000
1000
Q, FIGURE OF MERIT
500
200
100
50
20
10
V
R
= 3.0 Vdc
T
A
= 25°C
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
--75
1.0
2.0 3.0
5.0 7.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
30
0
3.0
6.0
Figure 2. Figure of Merit versus Voltage
9.0
15
21
12
18
24
V
R
, REVERSE VOLTAGE (VOLTS)
27
30
V
R
= 2.0 V
4.0 V
30 V
NORMALIZED to C
T
at T
A
= 25°C
20
30
50
70
100
200 300
--50
--25
0
+25
+50
+75
+100
+125
Figure 3. Figure of Merit versus Frequency
100
50
I R , REVERSE CURRENT (nA)
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
f, FREQUENCY (MHz)
Figure 4. Diode Capacitance versus Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
A
= 125°C
T
A
= 75°C
T
A
= 25°C
0
5.0
Figure 5. Reverse Current versus Reverse Voltage
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2
15
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
25
30
MV104
PACKAGE DIMENSIONS
TO-
-92 (TO-
-226)
CASE 29--11
ISSUE AM
A
R
P
L
SEATING
PLANE
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
------
0.250
------
0.080
0.105
------
0.100
0.115
------
0.135
------
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
------
6.35
------
2.04
2.66
------
2.54
2.93
------
3.43
------
K
X X
H
V
1
D
G
J
C
N
N
SECTION X-
-X
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
------
2.04
2.66
1.50
4.00
2.93
------
3.43
------
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
K
G
X X
V
1
D
J
C
N
SECTION X-
-X
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your local
Sales Representative
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3
MV104/D