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MV104

Description
Varactor Diodes 32V 37pF
CategoryDiscrete semiconductor    diode   
File Size121KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MV104 Overview

Varactor Diodes 32V 37pF

MV104 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCASE 29-11, TO-226AA, 3 PIN
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other features1% MATCHING GUARANTEED
Minimum breakdown voltage32 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance6.33%
Minimum diode capacitance ratio2.5
Nominal diode capacitance39.5 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Maximum power dissipation0.28 W
Certification statusNot Qualified
minimum quality factor100
Maximum repetitive peak reverse voltage32 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
Varactor Diode ClassificationABRUPT
MV104
Silicon Tuning Diode
Dual Voltage Variable Capacitance Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top- of- the- line application requiring
- -
-
back- -back diode configurations for minimum signal distortion and
-to-
detuning.
Features
http://onsemi.com
Pin 1
A1
Pin 2
C
Pin 3
A2
High Figure of Merit --
Q = 140 (Typ) @ V
R
= 3.0 Vdc, f = 100 MHz
Guaranteed Capacitance Range - 37- pF @ V
R
= 3.0 Vdc
- -42
Dual Diodes - Save Space and Reduce Cost
-
Monolithic Chip Provides Near Perfect Matching -
-
Guaranteed
±
1.0% (Max) Over Specified Tuning Range
This is a Pb-
-Free Device*
12
TO-
-92
CASE 29
STYLE 15
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
32
200
280
2.8
+125
--55 to
+150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
MV
104
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MV104G
Package
TO--92
(Pb--Free)
Shipping
5000 Units / Bulk
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
C
T
, Diode Capacitance
V
R
= 3.0 Vdc, f = 1.0 MHz
pF
Device
MV104
©
Semiconductor Components Industries, LLC, 2007
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 100 MHz
C
R
, Capacitance Ratio
C
3
/C
30
f = 1.0 MHz
Min
2.5
Max
2.8
Min
37
Max
42
1
Min
100
Typ
140
April, 2007 - Rev. 5
-
Publication Order Number:
MV104/D
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