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2SB1202T-TL-E

Description
Bipolar Transistors - Pre-Biased NPN 100mA 50V w/bias resistor
CategoryDiscrete semiconductor    The transistor   
File Size282KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2SB1202T-TL-E Overview

Bipolar Transistors - Pre-Biased NPN 100mA 50V w/bias resistor

2SB1202T-TL-E Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Contacts3
Manufacturer packaging code369AH
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time2 weeks
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)200
JESD-609 codee6
Humidity sensitivity level1
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)15 W
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Ordering number : EN2113E
2SB1202/2SD1802
Bipolar Transistor
(–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA
Applicaitons
http://onsemi.com
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
Large current capacitance and wide ASO
Adoption of FBET and MBIT processes
Fast switching speed
Low collector to emitter saturation voltage
Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller
Specifications
( ): 2SB1202
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
(-
-)60
(--)50
(-
-)6
(--)3
(-
-)6
Unit
V
V
V
A
A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7518-003
6.5
5.0
4
2.3
1.5
0.5
Package Dimensions
unit : mm (typ)
7003-003
2SB1202S-E
2SB1202T-E
2SD1802S-E
2SD1802T-E
6.5
5.0
4
2.3
1.5
0.5
2SB1202S-TL-E
2SB1202T-TL-E
2SD1802S-TL-E
2SD1802T-TL-E
5.5
7.0
0.8
1.6
7.5
0.6
1
2
3
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP
0.6
1
2
0.8
1.2
3
2.5
0.85
0.7
5.5
7.0
0.5
0.85
1.2
0 to 0.2
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
2.3
2.3
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK
• Minimum Packing Quantity : 700 pcs./reel
Marking(TP, TP-FA)
B1202
RANK
LOT No.
Packing Type (TP-FA) : TL
D1802
Electrical Connection
1
2,4
RANK
LOT No.
TL
(For PNP, the polarity is reversed.)
3
Semiconductor Components Industries, LLC, 2013
September, 2013
92513 TKIM/82912 TKIM/42512EA TKIM/13004TN (KT)/92098HA (KT)/8259MO/4137KI/4116KI, TS No.2113-1/7

2SB1202T-TL-E Related Products

2SB1202T-TL-E 2SB1202S-TL-E
Description Bipolar Transistors - Pre-Biased NPN 100mA 50V w/bias resistor MOSFET 40V 6A
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
Contacts 3 3
Manufacturer packaging code 369AH 369AH
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Factory Lead Time 2 weeks 4 weeks
Maximum collector current (IC) 3 A 3 A
Configuration Single Single
Minimum DC current gain (hFE) 200 140
JESD-609 code e6 e6
Humidity sensitivity level 1 1
Maximum operating temperature 150 °C 150 °C
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 15 W 15 W
surface mount YES YES
Terminal surface Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi)
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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