EEWORLDEEWORLDEEWORLD

Part Number

Search

NTE2972

Description
MOSFET N-Channel, Enhancement Mode High Speed Switch
CategoryDiscrete semiconductor    The transistor   
File Size20KB,2 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
Download Datasheet Parametric View All

NTE2972 Overview

MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2972 Parametric

Parameter NameAttribute value
MakerNTE
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage700 V
Maximum drain current (ID)10 A
Maximum drain-source on-resistance1.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)30 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTE2972
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D
SMPS
D
DC–DC Converter
D
Battery Charger
D
Power Supply of Printer
D
Copier
D
HDD, FDD, TV, VCR
D
Personal Computer
Absolute Maximum Ratings:
(T
C
= +25°C unless otherwise specified)
Drain–Source Voltage (V
GS
= 0V), V
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Gate–Source Voltage (V
DS
= 0V), V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V
Drain Current, I
D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Maximum Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Channel Temperature Range, T
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, R
th(ch–c)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83°C/W
Electrical Characteristics:
(T
ch
= +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
Symbol
Test Conditions
Min
700
±30
2.0
4.8
Typ
3.0
1.0
5.0
8.0
Max
±10
1.0
4.0
1.3
6.5
Unit
V
V
µA
mA
V
V
S
V
(BR)DSS
V
DS
= 0V, I
D
= 1mA
V
(BR)GSS
V
DS
= 0V, I
G
=
±100µA
I
GSS
I
DSS
V
GS(th)
R
DS(on)
V
DS(on)
|y
fs
|
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 700V, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 5A
V
GS
= 10V, I
D
= 5A
V
GS
= 10V, I
D
= 5A

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2883  1184  2083  373  307  59  24  42  8  7 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号