NTE2960
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D
SMPS
D
DC–DC Converter
D
Battery Charger
D
Power Supply of Printer
D
Copier
D
HDD, FDD, TV, VCR
D
Personal Computer
Absolute Maximum Ratings:
(T
C
= +25°C unless otherwise specified)
Drain–Source Voltage (V
GS
= 0V), V
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate–Source Voltage (V
DS
= 0V), V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V
Drain Current, I
D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21A
Maximum Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Channel Temperature Range, T
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, R
th(ch–c)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.13°C/W
Isolation Voltage, V
ISO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Electrical Characteristics:
(T
ch
= +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
Symbol
Test Conditions
Min
900
±30
–
–
2.0
–
–
4.2
Typ
–
–
–
–
3.0
1.54
4.62
7.0
Max
–
–
±10
1.0
4.0
2.00
6.00
–
Unit
V
V
µA
mA
V
Ω
V
S
V
(BR)DSS
V
DS
= 0V, I
D
= 1mA
V
(BR)GSS
V
DS
= 0V, I
G
=
±100µA
I
GSS
I
DSS
V
GS(th)
R
DS(on)
V
DS(on)
|y
fs
|
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 900V, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
GS
= 10V, I
D
= 3A
V
GS
= 10V, I
D
= 3A
Analog electronics
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