NTE2946
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D
Low Static Drain–Source ON Resistance
D
Improved Inductive Ruggedness
D
Fast Switching Times
D
Low Input Capacitance
D
Extended Safe Operating Area
D
Improved High Temperature Reliability
D
TO220 Type Isolated Package
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), V
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain–Gate Voltage (R
GS
= 1MΩ, Note 1), V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V
Drain Current, I
D
Continuous
T
C
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6A
T
C
= +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A
Gate Current (Pulsed), I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±1.5A
Single Pulsed Avalanche Energy (Note 3), E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161mJ
Avalanche Current, I
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6A
Total Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
L
. . . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12K/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
thCS
. . . . . . . 0.5K/W
Maximum Junction–to–Ambient (Free Air Operation), R
thJA
. . . . . . . . . . . . . . . . . . . . 62.5K/W
Note 1. T
J
= +25° to +150°C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 14mH, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= +25°C.
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate–Source Leakage Forward
Gate–Source Leakage Reverse
Zero Gate Voltage Drain Current
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
(Body Diode)
(Body Diode) Note 2
T
J
= +25°C, I
S
= 8A, V
GS
= 0V, Note 4
T
J
= +25°C, I
F
= 8A, dI
F
/dt = 100A/µs
V
GS
= 10V, I
D
= 8A, V
DS
= 0.8 Max.
Rating, (Gate charge is essentially
independent of operating temperature)
V
DD
= 0.5 BV
DSS,
I
D
= 8A, Z
O
= 9.1Ω,
(MOSFET switching times are essentially
independent of operating temperature)
Test Conditions
V
GS
= 0v, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 20V
V
GS
= –20V
V
DS
= Max. Rating, V
GS
= 0
V
DS
= 0.8 Max. Rating, T
C
= +125°C
Static Drain–Source ON Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
(Gate–Source Plus Gate–Drain)
Gate–Source Charge
Gate–Drain (“Miller”) Charge
V
GS
= 10V, I
D
= 4A, Note 4
V
DS
≥
50V, I
D
= 4A, Note 4
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Min
500
2.0
–
–
–
–
–
4.0
–
–
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
6.5
1510
154
66
14
23
49
20
–
9
27
Max
–
4.0
100
–100
250
1000
0.85
–
–
–
–
21
35
74
30
74
–
–
Unit
V
V
nA
nA
µA
µA
Ω
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
–
–
–
–
–
–
–
460
8
32
2
970
A
A
V
ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
