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MRF1513NT1

Description
Development Boards u0026 Kits - ARM Tower Platform Kinetis KE1
CategoryDiscrete semiconductor    The transistor   
File Size524KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MRF1513NT1 Overview

Development Boards u0026 Kits - ARM Tower Platform Kinetis KE1

MRF1513NT1 Parametric

Parameter NameAttribute value
Brand NameFreescale
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerNXP
package instructionROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
Contacts4
Manufacturer packaging codeCASE 466-03
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID1084164
Samacsys Pin Count3
Samacsys Part CategoryMOSFET (N-Channel)
Samacsys Package CategoryOther
Samacsys Footprint NameMRF1513NT1-1
Samacsys Released Date2019-06-16 11:51:05
Is SamacsysN
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PQSO-N4
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)31.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal locationQUAD
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
Freescale Semiconductor
Technical Data
Document Number: MRF1513N
Rev. 12, 6/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common source amplifier applications in 7.5 volt
portable and 12.5 volt mobile FM equipment.
D
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 3 Watts
Power Gain — 15 dB
Efficiency — 65%
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Features
Excellent Thermal Stability
G
Characterized with Series Equivalent Large - Signal
Impedance Parameters
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
S
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
MRF1513NT1
520 MHz, 3 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
(1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
- 0.5, +40
±
20
2
31.25
0.25
- 65 to +150
150
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(2)
4
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula P
D
=
TJ – TC
Rating
3
Package Peak Temperature
260
Unit
°C
R
θJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
MRF1513NT1
1
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