NTE2900
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Features:
D
Dynamic dv/dt Rating
D
Repetitive Avalanche Rated
D
Fast Switching
D
Ease of Paralleling
D
Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
GS
= 10V), I
D
T
C
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
T
C
= +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.5A
Pulsed Drain Current (Note 1), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A
Power Dissipation (T
C
= +25°C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Gate–to–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20
Single Pulse Avalanche Energy (Note 2), E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550mJ
Avalanche Current (Note 1), I
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Repetitive Avalanche Energy (Note 1), E
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.8V/ns
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
L
. . . . . . . . . . . . . . . . . +300°C
Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Thermal Resistance, Junction–to–Ambient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
thCS
. . . . . . . . . . . . 0.5°C/W
Note
Note
Note
Note
1.
2.
3.
4.
Repetitive rating; pulse width limited by maximum junction temperature.
V
DD
= 25V, starting T
J
= +25°C, L = 4.5mH, R
G
= 25Ω, I
AS
= 14A
I
SD
≤
14A, di/dt
≤
150A/µs, V
DD
≤
250V, T
J
≤
+175°C
Pules Width
≤
300µs, Duty Cycle
≤
2%.
Electrical Characteristics:
(T
J
= +25°C unless otherwise specified)
Parameter
Drain–to–Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain–to–Source On–Resistance
Gate Threshold Voltage
Forward Transconductance
Drain–to–Source Leakage Current
Symbol
V
(BR)DSS
Test Conditions
V
GS
= 0V, I
D
= 250µA
Min
250
–
–
2.0
6.7
–
–
–
–
–
–
–
V
DD
= 125V, I
D
= 7.9A, R
G
= 9.1Ω,
R
D
= 8.7Ω, Note 4
Ω
–
–
–
–
Between lead, .250in. (6.0) mm from
package and center of die contact
V
GS
= 0V, V
DS
= 25V, f = 1MHz
–
–
–
–
–
Typ
–
0.34
–
–
–
–
–
–
–
–
–
–
11
24
53
49
4.5
7.5
1300
330
85
Max
–
–
0.28
4.0
–
25
250
100
–100
68
11
35
–
–
–
–
–
–
–
–
–
Unit
V
V/°C
Ω
V
mhos
µA
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
pF
pF
pF
∆V
(BR)DSS
Reference to +25°C, I
D
= 1mA
∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
V
GS
= 10V, I
D
= 8.4A, Note 4
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 50V, I
D
= 8.4A, Note4
V
DS
= 250V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= +125°C
V
GS
= 20V
V
GS
= –20V
I
D
= 7.9A, V
DS
= 200V, V
GS
= 10V,
Note 4
Gate–to–Source Forward Leakage
Gate–to–Source Reverse Leakage
Total Gate Charge
Gate–to–Source Charge
Gate–to–Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
Source–Drain Ratings and Characteristics:
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Note 1
T
J
= +25°C, I
S
= 14A, V
GS
= 0V,
Note 4
T
J
= +25°C, I
F
= 7.9A,
di/dt = 100A/µs, Note 4
Test Conditions
Min
–
–
–
–
–
Typ
–
–
–
250
2.3
Max
14
56
1.8
500
4.6
Unit
A
A
V
ns
µC
Intrinsic turn–on time is neglegible (turn–on is dominated by L
S
+L
D
)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width
≤
300µs; duty cycle
≤
2%.
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