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BLF6H10LS-160118

Categorysemiconductor    Discrete semiconductor   
File Size1009KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Id - Continuous Drain Current600 mA
Vds - Drain-Source Breakdown Voltage104 V
Rds On - Drain-Source Resistance200 mOhms
TechnologySi
Gain20 dB
Output Power160 W
Mounting StyleSMD/SMT
Package / CaseSOT-467B-3
PackagingReel
Operating Frequency700 MHz to 1000 MHz
Factory Pack Quantity400
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
BLF6H10L-160; BLF6H10LS-160
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 160 W LDMOS RF power transistor for base station applications. The transistor can
deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband
performance of this device makes it ideal for base station applications.
Table 1.
Typical performance
RF performance at V
DS
= 50 V in a common-source Class-AB test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
960
I
Dq
(mA)
600
V
DS
(V)
50
P
L(AV)
(W)
38
G
p
(dB)
20
D
(%)
34
ACPR
(dBc)
32
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF.
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Low R
th
providing excellent thermal stability
Low output capacitance for wideband performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
No internal matching for broadband applications
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power applications for GSM, GSM EDGE, W-CDMA, CDMA base stations and
multi carrier applications in the 729 MHz to 960 MHz frequency range
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