BC856BWT1,
SBC856BWT1 Series,
BC857BWT1,
SBC857BWT1 Series,
BC858AWT1 Series
General Purpose
Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
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COLLECTOR
3
1
BASE
2
EMITTER
3
•
AEC−Q101 Qualified and PPAP Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858
Collector-Base Voltage
BC856, SBC856
BC857, SBC857
BC858
Emitter−Base Voltage
Collector Current
−
Continuous
Symbol
V
CEO
Value
−65
−45
−30
V
−80
−50
−30
−5.0
−100
V
mAdc
Unit
V
1
xx M
G
G
V
CBO
xx = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
V
EBO
I
C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
883
−55
to +150
Unit
mW
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 3
1
Publication Order Number:
BC856BWT1/D
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1
Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA)
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA,
V
EB
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−10
mA)
Emitter
−Base
Breakdown Voltage
(I
E
=
−1.0
mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
BC856, SBC856 Series
BC857B, SBC857B Only
BC858 Series
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V
(BR)CEO
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−15
−4.0
V
Symbol
Min
Typ
Max
Unit
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
Collector Cutoff Current (V
CB
=
−30
V)
Collector Cutoff Current
(V
CB
=
−30
V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−10
mA,
V
CE
=
−5.0
V)
SBC857B BC858B
BC856A, BC585A
BC856B, SBC856B, BC857B,
BC857C
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
SBC857B, BC858B
BC857C
Collector
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
On Voltage
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
(I
C
=
−10
mA, V
CE
=
−5.0
V)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
=
−10
mA, V
CE
=
−5.0
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
=
−10
V, f = 1.0 MHz)
Noise Figure
(I
C
=
−0.2
mA, V
CE
=
−5.0
Vdc, R
S
= 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
BC856A, BC858A
BC856B, SBC856B, BC857B,
I
CBO
nA
mA
h
FE
−
−
−
125
220
420
90
150
270
180
290
520
−
−
−0.7
−0.9
−
−
−
−
−
250
475
800
−
V
CE(sat)
V
−
−
−
−
−0.6
−
−0.3
−0.65
V
−
−
V
−0.75
−0.82
V
BE(sat)
V
BE(on)
f
T
C
ob
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
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2
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1
Series
BC857/SBC847/BC858
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= -10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
I
C
, COLLECTOR CURRENT (mAdc)
-100 -200
0
-0.1 -0.2
V
CE(sat)
@ I
C
/I
B
= 10
-0.5 -1.0 -2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mAdc)
-50
-100
V
BE(on)
@ V
CE
= -10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
T
A
= 25°C
-1.6
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-1.2
I
C
=
-10 mA
I
C
= -50 mA
I
C
= -200 mA
I
C
= -100 mA
-0.8
-0.4
I
C
= -20 mA
0
-0.02
-0.1
-1.0
I
B
, BASE CURRENT (mA)
-10 -20
-0.2
-10
-1.0
I
C
, COLLECTOR CURRENT (mA)
-100
Figure 3. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 4. Base−Emitter Temperature Coefficient
10
C
ib
7.0
T
A
= 25°C
C, CAPACITANCE (pF)
5.0
C
ob
400
300
200
150
100
80
60
40
30
20
-0.5
V
CE
= -10 V
T
A
= 25°C
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain
−
Bandwidth Product
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3
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1
Series
BC856/SBC856
-1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= -5.0 V
T
A
= 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
T
J
= 25°C
-0.8
V
BE(sat)
@ I
C
/I
B
= 10
-0.6
V
BE
@ V
CE
= -5.0 V
-0.4
-0.2
0.2
0
-0.2
V
CE(sat)
@ I
C
/I
B
= 10
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I
C
, COLLECTOR CURRENT (mA)
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-1.0
-1.6
I
C
=
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-1.4
-1.2
-1.8
q
VB
for V
BE
-55°C to 125°C
-0.8
-2.2
-0.4
T
J
= 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
I
B
, BASE CURRENT (mA)
-5.0
-10
-20
-2.6
-3.0
-0.2
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mA)
-100 -200
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
T
J
= 25°C
C, CAPACITANCE (pF)
20
C
ib
500
V
CE
= -5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
-0.1 -0.2
C
ob
20
-0.5
-1.0 -2.0
-5.0 -10 -20
V
R
, REVERSE VOLTAGE (VOLTS)
-50 -100
-100
-1.0
-10
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current−Gain
−
Bandwidth Product
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4
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1
Series
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Z
qJC
(t) = r(t) R
qJC
R
qJC
= 83.3°C/W MAX
Z
qJA
(t) = r(t) R
qJA
R
qJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
−
T
C
= P
(pk)
R
qJC
(t)
D = 0.5
0.2
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k 10 k
Figure 13. Thermal Response
-200
1s
IC, COLLECTOR CURRENT (mA)
-100
-50
T
A
= 25°C
T
J
= 25°C
3 ms
-10
-5.0
BC858
BC857
BC856
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
The safe operating area curves indicate I
C
−V
CE
lim-
its of the transistor that must be observed for reliable oper-
ation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided T
J(pk)
≤
150°C.
T
J(pk)
may be calculated from the data in Figure 13. At
high case or ambient temperatures, thermal limitations
will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
-2.0
-1.0
Figure 14. Active Region Safe Operating Area
ORDERING INFORMATION
Device
BC856BWT1G
SBC856BWT1G
BC857BWT1G
SBC857BWT1G
BC857CWT1G
BC858AWT1G
BC858BWT1G
Marking
3B
Package
SC−70/SOT−323
(Pb−Free)
SC−70/SOT−323
(Pb−Free)
SC−70/SOT−323
(Pb−Free)
SC−70/SOT−323
(Pb−Free)
SC−70/SOT−323
(Pb−Free)
Shipping
†
3,000 / Tape & Reel
3F
3G
3J
3K
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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