Teccor
®
brand Thyristors
EV Series 0.8 Amp Sensitive SCRs
SxX8xSx Series
Description
New device series offers high static dv/dt and lower turn
off (t
q
) sensitive SCR with its small die planar construction
design. It is specifically designed for GFCI (Ground Fault
Circuit Interrupter) and Gas Ignition applications. All
SCRs junctions are glass-passivated to ensure long term
reliability and parametric stability.
Features
mount packages
Main Features
Symbol
I
T(RMS)
V
DRM
/ V
RRM
I
GT
Value
0.8
400 to 800
5 to 200
Unit
A
V
μA
< 25 μsec
q
)
capability > 10Amps
( V
DRM
/ V
RRM
)
capability - up to 800V
Schematic Symbol
A
microprocessor interface
Applications
The SxX8xSx EV series is specifically designed for
GFCI (Ground Fault Circuit Interrupter) and gas ignition
applications.
Absolute Maximum Ratings
Symbol
Parameter
TO-92
I
T(RMS)
RMS on-state current (full sine wave)
SOT-89
SOT-223
TO-92
I
T(AV)
Average on-state current
SOT-89
SOT-223
TO-92
SOT-89
SOT-223
t
p
= 10 ms
t
p
= 8.3 ms
TO-92
SOT-89
SOT-223
t
p
= 10 μs
—
—
—
T
C
= 55°C
T
C
= 60°C
T
L
= 60°C
T
C
= 55°C
T
C
= 60°C
T
L
= 60°C
F= 50Hz
F= 60Hz
F = 50 Hz
F = 60 Hz
T
J
= 125°C
T
J
= 125°C
T
J
= 125°C
—
—
Value
0.8
0.8
0.8
0.51
0.51
0.51
8
10
0.32
0.41
50
1.0
0.1
-40 to 150
-40 to 125
Unit
A
A
A
A
A
A
A
A
A
2
s
A
2
s
A/μs
A
W
°C
°C
G
K
I
TSM
I
2
t
di/dt
I
GM
P
G(AV)
T
stg
T
J
Non repetitive surge peak on-state current
(Single cycle, T
J
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current I
G
= 10mA
Peak Gate Current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
173
Revised: July 9, 2008
SxX8xSx Series
EV 0.8 A SCRs
Teccor
®
brand Thyristors
EV Series 0.8 Amp Sensitive SCRs
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
Description
Test Conditions
V
D
= 6V
R
L
= 100 Ω
V
D
= 6V
R
L
= 100 Ω
I
RG
= 10μA
R
GK
= 1 KΩ
T
J
= 125°C
V
D
= V
DRM
/V
RRM
Exp. Waveform
R
GK
=1 kΩ
T
J
= 25°C @ 600 V
R
GK
=1 kΩ
I
G
=10mA
PW = 15μsec
I
T
= 1.6A(pk)
Limit
MIN.
MAX.
MAX.
MIN.
MAX.
Value
SxX8yS1
0.5
5
SxX8yS2
1
50
0.8
5
5
SxX8yS
15
200
Unit
μA
μA
V
V
mA
I
GT
V
GT
V
GRM
I
H
(dv/dt)s
DC Gate Trigger Current
DC Gate Trigger Voltage
Peak Reverse Gate Voltage
Holding Current
Critical Rate-of-Rise of
Off-State Voltage
MIN.
75
V/μs
t
q
t
gt
Note: x = voltage, y = package
Turn-Off Time
Turn-On Time
MAX.
MAX.
30
2.0
25
2.0
25
2.0
μs
μs
Static Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
V
TM
I
DRM
Description
Peak On-State Voltage
Test Conditions
I
TM
= 1.6A (pk)
T
J
= 25°C @ V
D
= V
DRM
R
GK
=1 kΩ
T
J
= 125°C @ VD = V
DRM
R
GK
=1 kΩ
Limit
MAX.
MAX.
MAX.
Value
1.70
3
500
Unit
V
μA
μA
Off-State Current, Peak Repetitive
Thermal Resistances
Symbol
Description
Test Conditions
TO-92
R
th(j-c)
Junction to case (AC)
I
T
= 0.8A
(RMS)1
SOT-223
SOT-89
TO-92
R
th(j-a)
Junction to ambient
I
T
= 0.8A
(RMS)1
SOT-223
SOT-89
1
Value
75
30
50
150
60
90
Unit
°C/ W
°C/ W
°C/ W
°C/ W
°C/ W
°C/ W
60Hz AC resistive load condition, 100% conduction.
SxX8xSx Series
174
Revised: July 9, 2008
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor
®
brand Thyristors
EV Series 0.8 Amp Sensitive SCRs
Figure 1: Normalized DC Gate Trigger Current For All
Quadrants vs. Junction Temperature
2.0
Figure 2: Normalized DC Holding Current
vs. Junction Temperature
4.0
I
GT
(T
J
= 25°C)
1.5
3.0
1.0
I
H
(T
J
= 25°C)
I
GT
I
H
-40
-15
+25
+65
+105
+125
2.0
Ratio of
0.5
Ratio of
1.0
0.0
0.0
-55
-35
-15
+5
+25
+45
+65
+85
+105
+125
Junction Temperature (T
J
) - °C
Junction Temperature (T
J
) - °C
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
1.0
0.9
Figure 4: Power Dissipation (Typical)
vs. RMS On-State Current
0.8
Average On-state Power Dissipation
[P
D(AV)
] - Watts
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Gate Trigger Voltage (V
GT
) - V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Junction Temperature (T
J
) - °C
RMS On-state Current [I
T(RMS)
] - Amps
Figure 5: Maximum Allowable Case Temperature
vs. On-State Current
130
Maximum Allowable Case Temperature
(T
C
) -
o
C
120
110
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
o
CASE TEMPERATURE: Measured as
shown on dimensional drawings
100
90
TO-92
80
70
60
50
0.0
0.1
0.2
0.3
0.4
SOT-223 & SOT-89
0.5
0.6
0.7
0.8
RMS On-state Current [I
T(RMS)
] - Amps
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
175
Revised: July 9, 2008
SxX8xSx Series
EV 0.8 A SCRs
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
o
Teccor
®
brand Thyristors
EV Series 0.8 Amp Sensitive SCRs
Figure 6: Surge Peak On-State Current vs. Number of Cycles
20
Peak Surge (Non-repetitive) On-State
Current (I
T S M
) – Amps .
10
9
8
7
6
5
4
3
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [I
T(RMS)
]: Max Rated Value at
Specific Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state rated value.
0.8
2
AD
evi
ces
1
1
2
3
4
5
6 7 8 9 10
20
30 40
60 80 100
200
300 400 600
1000
Surge Current Duration - Full Cycle
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp)
(T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Time (min to max) (t
s
)
Pb – Free assembly
T
P
Temperature
Ramp-up
t
P
150°C
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260
+0/-5
°C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
T
L
T
S(max)
Preheat
t
L
Ramp-do
Ramp-down
T
S(min)
t
S
25
time to peak temperature
Time
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
SxX8xSx Series
176
Revised: July 9, 2008
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor
®
brand Thyristors
EV Series 0.8 Amp Sensitive SCRs
Physical Specifications
Terminal Finish
Body Material
Lead Material
100% Matte Tin-plated.
UL recognized epoxy meeting flammability
classification 94V-0.
Copper Alloy
Reliability/Environmental Tests
Test
AC Blocking
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 110°C for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
1008 hours; -40°C
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwell-
time at each temperature; 10 sec (max)
transfer time between temperature
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
MIL-STD-750 Method 2031
ANSI/J-STD-002, category 3, Test A
Temperature Cycling
Temperature/
Humidity
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the Thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
High Temp Storage
Low-Temp Storage
Thermal Shock
Autoclave
Resistance to
Solder Heat
Solderability
Lead Bend
Dimensions – TO-92 (E Package)
T
C
Measuring Point
Dimension
A
B
D
E
F
G
H
J
K
L
Inches
Min
0.176
0.500
0.095
0.150
0.046
0.135
0.088
0.176
0.088
0.013
0.013
0.054
0.145
0.096
0.186
0.096
0.019
0.017
0.105
Max
0.196
Millimeters
Min
4.47
12.70
2.41
3.81
1.16
3.43
2.23
4.47
2.23
0.33
0.33
1.37
3.68
2.44
4.73
2.44
0.48
0.43
2.67
Max
4.98
A
B
Cathode /
MT1 / PIN 1
Gate / PIN 2
E
Anode / MT2 / PIN 3
M
All leads insulated from case. Case is electrically nonconductive.
M
L
F
D
K
J
H
G
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
177
Revised: July 9, 2008
SxX8xSx Series
EV 0.8 A SCRs
MIL-STD-750, M-2036 Cond E
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