This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP40N25-60
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 30 V
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 250 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 250 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 6 V, I
D
= 15 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
a
Symbol
Test Conditions
Min .
250
2
Typ.
Max.
Unit
4
± 250
1
50
250
V
nA
µA
A
70
0.049
0.060
0.121
0.163
0.051
70
5000
0.064
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DS
= 15 V, I
D
= 20 A
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
300
170
95
140
pF
V
DS
= 125 V, V
GS
= 10 V, I
D
= 45 A
f = 1 MHz
V
DD
= 100 V, R
L
= 2.78
I
D
45 A, V
GEN
= 10 V, R
g
= 2.5
28
34
1.6
22
220
40
145
35
330
60
220
45
70
nC
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
A
V
ns
A
µC
I
F
= 45 A, V
GS
= 0 V
I
F
= 45 A, di/dt = 100 A/µs
1
150
12
0.9
1.5
225
18
2
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP40N25-60
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 thru 7 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6V
80
100
60
60
40
40
T
C
= 125 °C
20
25 °C
- 55 °C
0
20
5V
4V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
150
T
C
= - 55 °C
g
fs
- Transconductance (S)
25 °C
R
DS(on)
- On-Resistance ()
120
0.08
0.10
Transfer Characteristics
90
125 °C
60
0.06
V
GS
= 6 V
V
GS
= 10 V
0.04
30
0.02
0
0
10
20
30
40
50
60
0.00
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
7000
6000
C
iss
C - Capacitance (pF)
5000
4000
3000
2000
1000
0
0
40
80
120
160
200
V
DS
- Drain-to-Source Voltage (V)
C
rss
20
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
16
V
DS
= 125 V
I
D
= 45 A
12
8
4
C
oss
0
0
30
60
90
120
150
180
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP40N25-60
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.8
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V
I
D
= 20 A
I
S
- Source Current (A)
100
2.4
2.0
T
J
= 150 °C
10
T
J
= 25 °C
1.6
1.2
0.8
0.4
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
100
300
290
Source-Drain Diode Forward Voltage
I
D
= 1.0 mA
280
10
I
Dav
(A)
V
DS
(V)
I
AV
(A) at T
A
= 25 °C
270
260
250
240
I
AV
(A) at T
A
= 150 °C
0.1
0.00001
0.0001
0.001
0.01
t
in
(s)
0.1
1
230
- 50
- 25
0
25
50
75
100
125
150
175
1
T
J
- Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown vs. Junction Temperature
www.vishay.com
4
Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?73132.
Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Qingyuefeng is a domestically produced PCB software independently developed by Shanghai Qingyue Software Co., Ltd. It is divided into four parts: Schdoc, SchLib, PcbDoc and PcbLib. Use SchDoc and SchL...
I've been studying hardware recently, and I found that there are many organizations in Shanghai that study software, such as SHLUG and GTUG. They often hold events and have some very interesting lectu...
I wrote a program for LCD12864 using PIC24 for three days, but it didn't work. I modified the program for 51 and M430, but it didn't work. I couldn't debug it for three days, and I was very depressed....
The idea is this: when the program is running, when the function needs to display pictures, it reads the picture files from the disk and generates a playlist, then displays them in sequence from the p...
I have configured it to SCI_A download mode and used the official routine, but it just can't connect. Sector problems occur when using my own program...
Computer Vision (Lu Peng, Beijing University of Posts and Telecommunications) : https://training.eeworld.com.cn/course/6142This course is an undergraduate course in the Department of Intelligent Scien...
Google's driverless technology is not only an eye-catching technology, but also a subversion of the car usage model.
Those who have watched anti-terrorism films and TV dramas must have been im...[Details]
When choosing a laptop battery, you should consider several factors, such as power, appearance, and quality.
Regarding power, we often see that a manufacturer uses values such as the number ...[Details]
As cellular phones become more advanced, the power consumption of the system during operation and the power consumption during standby are also increasing. Therefore, the power management design of...[Details]
Overview
As a remote network communication control method with advanced technology, high reliability, complete functions and reasonable cost, CAN-bus has been widely used in various automa...[Details]
Smart lighting control systems provide high controllability for various buildings and further enhance the level of green energy. They are the core products of energy conservation and digital techn...[Details]
With the continuous consumption of earth's energy and the scarcity of resources, the harm of greenhouse effect to human beings, and the serious pollution of the atmosphere to the earth, the intern...[Details]
The traditional display screen using 51 single-chip microcomputer to control LED dot matrix has relatively simple functions. If it is to achieve diversified functions, it often takes a lot of time ...[Details]
FPGAs are used in 81% of electronic systems, including many commercial and defense products, and most FPGAs use BGA packaging. The BGA packaging is characterized by small solder balls and small sol...[Details]
1 Introduction
Ultrasound refers to elastic vibration with a frequency higher than the audible frequency limit (i.e., in the frequency band above 20 kHz). The propagation process of this vib...[Details]
0 Introduction
In order to improve the automation control of shortwave transmitters, so that they can automatically process from far to near, the technicians here use the ICS system to complete the ...[Details]
With the popularity of digital appliances, rechargeable batteries can be seen everywhere in people's daily lives and have become one of the indispensable daily necessities.
This article gives ...[Details]
0 Introduction
PROFIBUS is an open digital communication system with a wide range of applications, which has been included in the international standards IEC 61158 and IEC 61784. Since the gen...[Details]
If a car stereo could play multiple CDs, then such an in-car entertainment system was an advanced system configuration. Today's in-car infotainment systems are complex embedded subsystems that combine...[Details]
High-definition video surveillance has developed rapidly in recent years, mainly to solve the problem of unclear "details" in normal monitoring. Some cities use high-definition television surveilla...[Details]
For a long time, everyone has held a view when talking about power supplies: "Whether a power supply is good or not depends on whether it is heavy." So is it true that the heavier the power supply,...[Details]
PCB Design
京公网安备 11010802033920号
EEWORLD
