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NTE229

Description
Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp
CategoryDiscrete semiconductor    The transistor   
File Size18KB,2 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
Download Datasheet Parametric View All

NTE229 Overview

Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp

NTE229 Parametric

Parameter NameAttribute value
MakerNTE
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Samacsys DescriptiNTE ELECTRONICS - NTE229 - BIPOLAR TRANSISTOR, NPN, 30V
Maximum collector current (IC)0.05 A
Collector-based maximum capacity0.4 pF
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.425 W
Minimum power gain (Gp)28 dB
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)500 MHz
NTE229
Silicon NPN Transistor
VHF Oscillator, Mixer, IF Amp
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Power Dissipation (T
A
= +25°C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 425mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16”
±1/32”
from case, 10sec), T
L
. . . . . . . . . . . . . . . +230°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Base–Emitter ON Voltage
Current Gain–Bandwidth Product
Power Gain
Collector–Base Capacitance
Noise Figure
Symbol
Test Conditions
Min
30
3
30
30
500
28
Typ Max
200
225
0.85
0.4
6
V
V
MHz
dB
pF
dB
Unit
V
V
nA
V
(BR)CBO
I
C
= 100µA, I
E
= 0
V
(BR)EBO
I
E
= 100µA, I
C
= 0
I
CBO
h
FE
V
BE(on)
f
T
G
pe
C
cb
NF
V
CB
= 30V, I
E
= 0
I
C
= 5mA, V
CE
= 10V
I
C
= 5mA, V
CE
= 10V
I
C
= 5mA, V
CE
= 10V,
f = 100MHz
V
CC
= 12V, V
BB
= 2.5V,
f = 45MHz
I
E
= 0, V
CB
= 15V, f = 1MHz
V
CC
= 12V, f = 45MHz
Collector–Emitter Sustaining Voltage V
CEO(sus)
I
C
= 1mA, I
B
= 0

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Index Files: 135  2179  845  1794  2689  3  44  18  37  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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