NTE226 datasheet, PDF - EEWORLD Datasheet

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NTE226: DescriptionGermanium PNP Transistor Audio Power Amp; CategoryDiscrete semiconductor The transistor; File Size18KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com

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NTE226 Overview

Germanium PNP Transistor Audio Power Amp

NTE226 Parametric

Parameter Name	Attribute value
Maker	NTE
Parts packaging code	TO-66
package instruction	JAPANESE TO-66, 2 PIN
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	35 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-66
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	12 W
Maximum power dissipation(Abs)	12 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	GERMANIUM
Nominal transition frequency (fT)	0.7 MHz

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NTE226

Germanium PNP Transistor

Audio Power Amp

Description:

The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–

power output applications.

Absolute Maximum Ratings:

Collector–Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

Collector–Emitter Voltage (R

= 100Ω), V

CER

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

Emitter–Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A

Power Dissipation (T

= +25°C), P

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W

Operating Junction Temperature, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +85°C

Storage Temperature Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +85°C

Electrical Characteristics:

= +25°C unless otherwise specified)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Small–Signal Current Gain Resistance

Base Spreading Resistance

Symbol

CBO

EBO

Test Conditions

= 25V, I

= 0

= 6V, I

= 0

= 1.5V, I

= 200mA

= 1.5V, I

= 200mA

= 1.5V, I

= 200mA, f = 6MHz

Min Typ Max Unit

–

0.7

200

–

µA

MHz

Ω

100 275

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