BCX71JLT1G
General Purpose Transistor
PNP Silicon
Features
•
Moisture Sensitivity Level: 1
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−45
−45
−5.0
−100
Unit
Vdc
Vdc
Vdc
mAdc
1
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
Storage Temperature
Thermal Resistance,
Junction-to-Ambient (Note 1)
Symbol
P
D
Max
350
2.8
T
stg
R
qJA
150
357
Unit
mW
mW/°C
°C
°C/W
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.
BJ M
G
G
BJ
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BCX71JLT1G
Package
SOT−23
(Pb−free)
Shipping
†
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
August, 2009
−
Rev. 3
1
Publication Order Number:
BCX71J/D
BCX71JLT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
E
= 1.0
mAdc,
I
E
= 0)
Collector Cutoff Current
(V
CE
= 32 Vdc)
(V
CE
= 32 Vdc, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mAdc,
V
CE
= 5.0 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz)
Collector
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.25 mAdc)
(I
C
= 50 mAdc, I
B
= 1.25 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
Base−Emitter On Voltage
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
Output Capacitance
(V
CE
= 10 Vdc, I
C
= 0, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mAdc, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn−On Time
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
Turn−Off Time
(I
B2
= 1.0 mAdc, V
BB
= 3.6 Vdc, R1 = R2 = 5.0 kW, R
L
= 990
W)
t
on
t
off
ns
−
−
150
ns
800
h
FE
−
40
250
100
250
−
−
−0.6
−0.68
−0.6
−
−
−
460
−
500
Vdc
−0.25
−0.55
Vdc
−0.85
−1.05
Vdc
−0.75
pF
6.0
dB
6.0
V
(BR)CEO
V
(BR)EBO
I
CES
Vdc
−45
−5.0
−
−
−
Vdc
−
−20
−20
nAdc
mAdc
Symbol
Min
Max
Unit
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
NF
TYPICAL NOISE CHARACTERISTICS
(V
CE
=
−
5.0 Vdc, T
A
= 25°C)
10
7.0
en, NOISE VOLTAGE (nV)
5.0
I
C
= 10
mA
30
mA
100
mA
1.0 mA
300
mA
BANDWIDTH = 1.0 Hz
R
S
≈
0
In, NOISE CURRENT (pA)
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
10
0.1
10
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k 10 k
300
mA
100
mA
30
mA
10
mA
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
3.0
2.0
20
50 100 200
500
1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k 10 k
Figure 1. Noise Voltage
Figure 2. Noise Current
http://onsemi.com
2
BCX71JLT1G
NOISE FIGURE CONTOURS
(V
CE
=
−
5.0 Vdc, T
A
= 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
10 Hz to 15.7 kHz
Noise Figure is Defined as:
NF
+
20 log10
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200 300
500 700 1.0 k
I
C
, COLLECTOR CURRENT (mA)
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10
−23
j/°K)
T = Temperature of the Source Resistance (°K)
R
S
= Source Resistance (Ohms)
Figure 5. Wideband
TYPICAL STATIC CHARACTERISTICS
400
T
J
= 125°C
25°C
h FE, DC CURRENT GAIN
200
- 55°C
100
80
60
40
0.003 0.005
V
CE
= 1.0 V
V
CE
= 10 V
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (mA)
2.0
3.0
5.0 7.0
10
20
30
50 70 100
Figure 6. DC Current Gain
http://onsemi.com
3
BCX71JLT1G
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
100
IC, COLLECTOR CURRENT (mA)
T
A
= 25°C
0.8
I
C
= 1.0 mA
10 mA
50 mA
100 mA
T
A
= 25°C
PULSE WIDTH = 300
ms
80 DUTY CYCLE
≤
2.0%
300
mA
60
I
B
= 400
mA
350
mA
250
mA
200
mA
150
mA
0.6
0.4
40
100
mA
50
mA
0.2
20
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
0
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
T
J
= 25°C
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 1.0 V
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
0.2
0.5 1.0
2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
*APPLIES for I
C
/I
B
≤
h
FE
/2
0.8
*q
VC
for V
CE(sat)
0
- 55°C to 25°C
0.8
25°C to 125°C
1.6
q
VB
for V
BE
0.2
- 55°C to 25°C
25°C to 125°C
2.4
0.1
0.5
1.0 2.0
5.0
10 20
I
C
, COLLECTOR CURRENT (mA)
50
100
Figure 9. “On” Voltages
500
300
200
100
70
50
30
20
t
d
@ V
BE(off)
= 0.5 V
10
7.0
5.0
1.0
t
r
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
1000
700
500
300
200
t, TIME (ns)
100
70
50
30
20
10
-1.0
Figure 10. Temperature Coefficients
t
s
V
CC
= - 3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
2.0
3.0
20 30
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
50 70
100
- 2.0 - 3.0 - 5.0 - 7.0 -10
- 20 - 30
I
C
, COLLECTOR CURRENT (mA)
- 50 - 70 -100
Figure 11. Turn−On Time
Figure 12. Turn−Off Time
http://onsemi.com
4
BCX71JLT1G
TYPICAL DYNAMIC CHARACTERISTICS
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
500
T
J
= 25°C
300
200
V
CE
= 20 V
5.0 V
C, CAPACITANCE (pF)
10
T
J
= 25°C
7.0
C
ib
5.0
3.0
2.0
C
ob
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 13. Current−Gain — Bandwidth Product
Figure 14. Capacitance
20
10
hie , INPUT IMPEDANCE (k
Ω
)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
20
1.0 2.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
50
100
h
fe
≈
200
@ I
C
=
−1.0
mA
hoe, OUTPUT ADMITTANCE (
m
mhos)
V
CE
= -10 Vdc
f = 1.0 kHz
T
A
= 25°C
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5
20
1.0
2.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
50
100
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
h
fe
≈
200
@ I
C
= 1.0 mA
Figure 15. Input Impedance
Figure 16. Output Admittance
10
4
IC, COLLECTOR CURRENT (nA)
V
CC
= 30 V
10
3
10
2
10
1
10
0
I
CEO
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 V
10
-1
10
-2
-4
0
-2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140+ 160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 17. Typical Collector Leakage Current
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
