TK13A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS
VII)
TK13A60D
Switching Regulator Applications
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 0.33
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 6.5 S (typ.)
Low leakage current: I
DSS
= 10
μA
(max) (V
DS
= 600 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
±30
13
52
50
511
13
5.0
150
-55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
2.5
62.5
Unit
°C/W
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
5.3 mH, R
G
=
25
Ω,
I
AR
=
13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
Start of commercial production
2008-07
1
2013-11-01
TK13A60D
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
V
DD
≈
200 V
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V, I
D
=
13 A
Duty
≤
1%, t
w
=
10
μs
⎯
⎯
⎯
⎯
140
40
25
15
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
V
GS
0V
10 V
I
D
=
6.5
A
V
OUT
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
V
DS
=
600 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
6.5 A
V
DS
=
10 V, I
D
=
6.5 A
Min
⎯
⎯
600
2.0
⎯
1.8
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.33
6.5
2300
10
250
50
100
25
Max
±1
10
⎯
4.0
0.43
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
50
Ω
R
L
=
30
Ω
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
13 A, V
GS
=
0 V
I
DR
=
13 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
1600
20
Max
13
52
−1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K13A60D
Part No. (or abbreviation code)
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
Lot No.
Note 4
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2013-11-01
TK13A60D
I
D
– V
DS
20
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
8
30
10
9.0
I
D
– V
DS
8.0
COMMON SOURCE
Tc
=
25°C
PULSE TEST
(A)
16
(A)
25
7.5
20
7.0
DRAIN CURRENT I
D
12
6.5
8
6.0
4
5.5
VGS
=
5V
0
0
2
4
6
8
10
DRAIN CURRENT I
D
15
7.0
6.5
10
6.0
5
VGS
=
5.5V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE
V
DS
(V)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
I
D
– V
GS
COMMON SOURCE
VDS
=
20 V
25 PULSE TEST
20
V
DS
– V
GS
10
V
DS
(V)
30
(A)
8
COMMON SOURCE
Tc
=
25°C
PULSE TEST
DRAIN CURRENT I
D
DRAIN-SOURCE VOLTAGE
6
ID
=
13 A
15
4
10
Tc
=
100°C
5
Tc
=
25°C
Tc
= −55°C
0
0
2
4
6
8
10
2
6.5
3
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE
V
GS
(V)
GATE-SOURCE VOLTAGE
V
GS
(V)
⎪Y
fs
⎪
– I
D
FORWARD TRANSFER ADMITTANCE
⎪Y
fs
⎪
(S)
100
R
DS (ON)
– I
D
1
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(Ω)
COMMON SOURCE
VDS
=
20 V
PULSE TEST
10
100
25
Tc
= −55°C
1
VGS
=
10 V, 15 V
0.1
COMMON SOURCE
Tc
=
25°C
PULSE TEST
0.01
0.1
1
10
100
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
3
2013-11-01
TK13A60D
R
DS (ON)
– Tc
(A)
1.2
100
I
DR
– V
DS
COMMON SOURCE
Tc
=
25°C
PULSE TEST
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(
Ω)
COMMON SOURCE
1.0
VGS
=
10 V
PULSE TEST
DRAIN REVERSE CURRENT I
DR
0.8
ID
=
13 A
0.6
3
6.5
10
0.4
1
10
5
3
1
VGS
=
0,
−1
V
−0.6
−0.8
−1
−1.2
0.2
0
−80
−40
0
40
80
120
160
0.1
0
−0.2
−0.4
CASE TEMPERATURE
Tc
(°C)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CAPACITANCE – V
DS
10000
5
Ciss
V
th
– Tc
GATE THRESHOLD VOLTAGE
V
th
(V)
(pF)
4
1000
Coss
100
C
3
CAPACITANCE
2
10
Crss
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
1 Tc
=
25°C
0.1
1
1
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
PULSE TEST
−40
0
40
80
120
160
10
100
0
−80
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CASE TEMPERATURE
Tc
(°C)
P
D
– Tc
V
DS
(V)
80
500
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
(V)
GATE-SOURCE VOLTAGE
V
GS
20
DRAIN POWER DISSIPATION
P
D
(W)
400
VDS
16
VDD
=
100 V
400
60
DRAIN-SOURCE VOLTAGE
300
12
40
200
VGS
100
20
8
200 COMMON SOURCE
ID
=
13 A
Tc
=
25°C
4
PULSE TEST
0
0
40
80
120
160
0
0
20
40
60
0
80
CASE TEMPERATURE
Tc
(°C)
TOTAL GATE CHARGE
Q
g
(nC)
4
2013-11-01
TK13A60D
r
th
– t
w
NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch-c)
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
0.01
SINGLE PULSE
T
Duty
=
t/T
Rth (ch-c)
=
2.5°C/W
10 m
100 m
1
10
0.001
10
μ
100
μ
1m
PULSE WIDTH
t
w
(s)
SAFE OPERATING AREA
100
ID max (pulsed)
*
100
μs
*
10
1 ms
*
600
E
AS
– T
ch
AVALANCHE ENERGY
E
AS
(mJ)
ID max (continuous)
500
DRAIN CURRENT I
D
(A)
400
1
DC operation
Tc
=
25°C
300
200
0.1
100
0
*: SINGLE NONREPETITIVE PULSE
0.01
Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.001
1
10
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
VDSS max
1000
100
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
DRAIN-SOURCE VOLTAGE
V
DS
(V)
TEST CIRCUIT
R
G
=
25
Ω
V
DD
=
90 V, L
=
5.3 mH
WAVEFORM
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
VDSS
−
VDD
⎠
⎝
5
2013-11-01
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