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BUK661R8-30C118

Description
MOSFET N-CHAN 30V 120A
Categorysemiconductor    Discrete semiconductor   
File Size736KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MOSFET N-CHAN 30V 120A

BUK661R8-30C118 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance1.8 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingReel
ConfigurationSingle
Pd - Power Dissipation263 W
Factory Pack Quantity800
Transistor Type1 N-Channel
Unit Weight0.139332 oz
BUK661R8-30C
N-channel TrenchMOS intermediate level FET
Rev. 2.1 — 18 August 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11
[1]
Min
-
-
-
-
Typ
-
-
-
1.6
Max Unit
30
120
263
1.9
V
A
W
mΩ
Static characteristics
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